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1. WO2012011188 - 太陽電池およびその製造方法、並びに太陽電池の製造装置

公開番号 WO/2012/011188
公開日 26.01.2012
国際出願番号 PCT/JP2010/062420
国際出願日 23.07.2010
IPC
H01L 31/04 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
04光起電変換装置として使用されるもの
CPC
H01L 31/02168
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
02168the coatings being antireflective or having enhancing optical properties for the solar cells
H01L 31/068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
Y02E 10/546
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
546Polycrystalline silicon PV cells
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
出願人
  • 株式会社KIT KIT Co. Ltd. [JP]/[JP] (AllExceptUS)
  • 小林 光 KOBAYASHI, Hikaru [JP]/[JP]
発明者
  • 小林 光 KOBAYASHI, Hikaru
代理人
  • 河野 広明 KOUNO, Hiroaki
優先権情報
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLAR CELL, METHOD FOR PRODUCING SAME, AND DEVICE FOR PRODUCING SOLAR CELL
(FR) CELLULE SOLAIRE, SON PROCÉDÉ DE FABRICATION, ET DISPOSITIF POUR LA FABRICATION DE CELLULES SOLAIRES
(JA) 太陽電池およびその製造方法、並びに太陽電池の製造装置
要約
(EN)
One of the disclosed methods for producing a solar cell contains an immersion step for immersing a silicon substrate or a solar cell formed from the silicon substrate in a cyanide-containing solution of which the cyanide (CN) concentration is no greater than 5% more than 100 ppm and that is between 5°C and 50°C, inclusive. By means of this method of production, the level of defects that presumably exist on the surface and/or the p-n junction surface region of the silicon substrate or the solar cell formed from the silicon substrate can be decreased. Also, by means of the presence of cyanide ions (CN-), contamination by metals or the like present on the surface of the silicon substrate can be adequately eliminated. As a result, the solar cell can be caused to have higher efficiency.
(FR)
L'invention concerne des procédés de production d'une cellule solaire, l'un de ces procédés contenant une étape d'immersion consistant à plonger un substrat de silicium ou une cellule solaire formée à partir dudit substrat dans une solution contenant du cyanure dont la concentration en cyanure (CN) ne dépasse pas de plus de 5 % 100 ppm, et dont la température se situe entre 5 et 50 °C inclus. Grâce à ce procédé, le niveau des défauts qui existent probablement sur la surface et/ou dans la région de surface de la jonction p-n du substrat de silicium ou de la cellule solaire formée à partir dudit substrat peut être réduit. De plus, grâce à la présence d'ions cyanure (CN-), la contamination par des métaux ou autres présents sur la surface du substrat de silicium peut être supprimée. La cellule solaire peut ainsi présenter une plus grande efficacité.
(JA)
 本発明の1つの太陽電池の製造方法は、シアン(CN)濃度が100ppm超5%以下であって、5℃以上50℃以下のシアン含有溶液内に、シリコン基板又はそのシリコン基板から形成される太陽電池を浸漬する浸漬工程を含んでいる。この製造方法により、シリコン基板又はそのシリコン基板から形成される太陽電池の、おそらく表面及び/又はpn接合表面領域に存在する欠陥準位の低減化が図られる。また、シアン化物イオン(CN)の存在によって、シリコン基板表面上に存在した金属等の汚染も適切に除去される。その結果、太陽電池の高効率化が図られる。
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