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1. WO2012008072 - 固体撮像装置

公開番号 WO/2012/008072
公開日 19.01.2012
国際出願番号 PCT/JP2011/002238
国際出願日 15.04.2011
IPC
H04N 5/335 2011.01
H電気
04電気通信技術
N画像通信,例.テレビジョン
5テレビジョン方式の細部
30光または類似信号から電気信号への変換
335固体撮像素子を用いるもの
H01L 27/14 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
H04N 5/225 2006.01
H電気
04電気通信技術
N画像通信,例.テレビジョン
5テレビジョン方式の細部
222スタジオ回路;スタジオ装置;スタジオ機器
225テレビジョンカメラ
CPC
H01L 27/14618
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14618Containers
H01L 27/14625
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
H01L 27/14685
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
14685Process for coatings or optical elements
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L 31/0203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0203Containers; Encapsulations ; , e.g. encapsulation of photodiodes
出願人
  • パナソニック株式会社 Panasonic Corporation [JP]/[JP] (AllExceptUS)
  • 田制 隆 TASEI, Takashi (UsOnly)
  • 竹下 貴雄 TAKESHITA, Takao (UsOnly)
発明者
  • 田制 隆 TASEI, Takashi
  • 竹下 貴雄 TAKESHITA, Takao
代理人
  • 小栗 昌平 OGURI, Shohei
優先権情報
2010-16179816.07.2010JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLID-STATE IMAGE PICKUP DEVICE
(FR) DISPOSITIF DE CAPTURE D'IMAGE À SEMI-CONDUCTEURS
(JA) 固体撮像装置
要約
(EN)
Disclosed is a solid-state image pickup device wherein a translucent substrate can be prevented from breaking at the time of mounting the translucent substrate on a printed wiring board. The solid-state image pickup device is provided with a solid-state image pickup element (5), a transparent glass substrate (1) having the solid-state image pickup element (5) mounted thereon, and a printed wiring board (9) having the transparent glass substrate (1) mounted thereon with a low-melting point solder ball (8) therebetween as a bonding member. The solid-state image pickup element (5) is disposed between the transparent glass substrate (1) and the printed wiring board (9), and an image pickup region (6) is disposed to face the transparent glass substrate (1).
(FR)
La présente invention concerne un dispositif de capture d'image à semi-conducteurs dans lequel on peut éviter qu'un substrat translucide se brise au moment de son montage sur une carte de circuit imprimé. Le dispositif de capture d'image à semi-conducteurs est équipé d'un élément de capture d'image à semi-conducteurs (5), d'un substrat en verre transparent (1) sur lequel est monté l'élément de capture d'image à semi-conducteurs (5), et d'une carte de circuit imprimé (9) sur laquelle est monté le substrat en verre transparent (1), une boule de soudure à point de fusion bas (8) étant disposée entre ledit substrat et ladite carte en tant qu'élément de liaison. L'élément de capture d'image à semi-conducteur (5) est disposé entre le substrat en verre transparent (1) et la carte de circuit imprimé (9), et une région de capture d'image (6) est disposée en regard du substrat en verre transparent (1).
(JA)
 透光性基板がプリント配線基板へ実装されるときに、透光性基板が破壊することを防止可能な固体撮像装置を提供する。 本固体撮像装置は、固体撮像素子5と、固体撮像素子5が実装される透明ガラス基板1と、透明ガラス基板1が接合部材としての低融点半田ボール8を介して実装されるプリント配線基板9と、備え、固体撮像素子5が、透明ガラス基板1とプリント配線基板9との間に配置され、撮像領域6が透明ガラス基板1に対向するように配置されている。
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