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1. WO2011074604 - 半導体装置の製造方法、基板処理装置及び半導体装置

公開番号 WO/2011/074604
公開日 23.06.2011
国際出願番号 PCT/JP2010/072558
国際出願日 15.12.2010
IPC
H01L 21/316 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
31半導体本体上への絶縁層の形成,例.マスキング用またはフォトリソグラフィック技術の使用によるもの;これらの層の後処理;これらの層のための材料の選択
314無機物層
316酸化物またはガラス性酸化物または酸化物を基礎としたガラスからなるもの
C23C 16/56 2006.01
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
16ガス状化合物の分解による化学的被覆であって,表面材料の反応生成物を被覆層中に残さないもの,すなわち化学蒸着(CVD)法
56後処理
H01L 21/31 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
31半導体本体上への絶縁層の形成,例.マスキング用またはフォトリソグラフィック技術の使用によるもの;これらの層の後処理;これらの層のための材料の選択
H01L 21/318 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
31半導体本体上への絶縁層の形成,例.マスキング用またはフォトリソグラフィック技術の使用によるもの;これらの層の後処理;これらの層のための材料の選択
314無機物層
318窒化物からなるもの
CPC
C23C 16/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
C23C 16/405
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
405of refractory metals or yttrium
C23C 16/45527
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
45527characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
C23C 16/45561
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45561Gas plumbing upstream of the reaction chamber
C23C 16/45563
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45563Gas nozzles
C23C 16/45578
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45563Gas nozzles
45578Elongated nozzles, tubes with holes
出願人
  • 株式会社日立国際電気 HITACHI KOKUSAI ELECTRIC INC. [JP]/[JP] (AllExceptUS)
  • 齋藤 達之 SAITO Tatsuyuki [JP]/[JP] (UsOnly)
  • 湯浅 和宏 YUASA Kazuhiro [JP]/[JP] (UsOnly)
  • ▲ひろせ▼ 義朗 HIROSE Yoshiro [JP]/[JP] (UsOnly)
  • 竹林 雄二 TAKEBAYASHI Yuji [JP]/[JP] (UsOnly)
  • 笹島 亮太 SASAJIMA Ryota [JP]/[JP] (UsOnly)
  • 山本 克彦 YAMAMOTO Katsuhiko [JP]/[JP] (UsOnly)
  • 山崎 裕久 YAMAZAKI Hirohisa [JP]/[JP] (UsOnly)
  • 小倉 慎太郎 KOGURA Shintaro [JP]/[JP] (UsOnly)
  • 濱村 浩孝 HAMAMURA Hirotaka [JP]/[JP] (UsOnly)
発明者
  • 齋藤 達之 SAITO Tatsuyuki
  • 湯浅 和宏 YUASA Kazuhiro
  • ▲ひろせ▼ 義朗 HIROSE Yoshiro
  • 竹林 雄二 TAKEBAYASHI Yuji
  • 笹島 亮太 SASAJIMA Ryota
  • 山本 克彦 YAMAMOTO Katsuhiko
  • 山崎 裕久 YAMAZAKI Hirohisa
  • 小倉 慎太郎 KOGURA Shintaro
  • 濱村 浩孝 HAMAMURA Hirotaka
代理人
  • 油井 透 YUI Tohru
優先権情報
2009-28799018.12.2009JP
2010-06837224.03.2010JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE TREATMENT APPARATUS, AND SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEURS, APPAREIL DE TRAITEMENT DU SUBSTRAT ET DISPOSITIF À SEMI-CONDUCTEURS
(JA) 半導体装置の製造方法、基板処理装置及び半導体装置
要約
(EN)
Disclosed is a semiconductor device manufacturing method wherein a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed, is exposed at one time or alternately to an oxygen-containing gas and a hydrogen-containing gas, and different modification treatments are performed at one time to the thin films, respectively.
(FR)
L'invention concerne un procédé de fabrication d'un dispositif à semi-conducteurs dans lequel un substrat, qui possède au moins deux sortes de couches minces ayant des composants élémentaires différents laminés ou exposés, est exposé en une fois ou par alternance à un gaz contenant de l'oxygène et à un gaz contenant de l'hydrogène, et différents traitements de modification sont effectués en une fois sur chacune des couches minces.
(JA)
 互いに異なる元素成分を有する2種以上の薄膜が積層あるいは露出された基板を、酸素含有ガスと水素含有ガスとに同時或いは交互に曝して、それぞれの薄膜に対して異なる改質処理を同時に行う。
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