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1. WO2011074262 - レーザモジュール

公開番号 WO/2011/074262
公開日 23.06.2011
国際出願番号 PCT/JP2010/007301
国際出願日 16.12.2010
IPC
H01S 5/022 2006.01
H電気
01基本的電気素子
S光を増幅または生成するために,放射の誘導放出による光増幅を用いた装置;光領域以外の電磁放射の誘導放出を用いた装置
5半導体レーザ
02レーザ作用にとって本質的ではない構造的な細部または構成
022マウント;ハウジング
CPC
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01S 5/02272
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02236Mounts or sub-mounts
02256Details of fixing the laser diode on the mount
02272using soldering
H01S 5/02276
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02236Mounts or sub-mounts
02276Wire-bonding details
H01S 5/02476
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
024Cooling arrangements
02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
H01S 5/4031
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
4031Edge-emitting structures
出願人
  • 三菱電機株式会社 Mitsubishi Electric Corporation [JP]/[JP] (AllExceptUS)
  • 玉谷 基亮 TAMAYA, Motoaki [JP]/[JP] (UsOnly)
  • 難波 知世 NANBA, Chise [JP]/[JP] (UsOnly)
  • 柳澤 隆行 YANAGISAWA, Takayuki [JP]/[JP] (UsOnly)
  • 大江 慎一 OE, Shinichi [JP]/[JP] (UsOnly)
  • 山本 修平 YAMAMOTO, Shuhei [JP]/[JP] (UsOnly)
  • 横山 彰 YOKOYAMA, Akira [JP]/[JP] (UsOnly)
発明者
  • 玉谷 基亮 TAMAYA, Motoaki
  • 難波 知世 NANBA, Chise
  • 柳澤 隆行 YANAGISAWA, Takayuki
  • 大江 慎一 OE, Shinichi
  • 山本 修平 YAMAMOTO, Shuhei
  • 横山 彰 YOKOYAMA, Akira
代理人
  • 高橋 省吾 TAKAHASHI, Shogo
優先権情報
2009-28770318.12.2009JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) LASER MODULE
(FR) MODULE LASER
(JA) レーザモジュール
要約
(EN)
Provided is an inexpensive module structure wherein it is possible to drive an LD array at low stress and at an appropriate temperature. The module is provided with a heat sink (3) for releasing the heat from a member which comes into contact therewith, a submount substrate (4) disposed on the heat sink (3) and configured from an insulating material, a feed layer (5A) disposed on the submount substrate (4), and a semiconductor laser array (6) having a plurality of light-emitting units disposed in parallel on the feed layer (5A), wherein: the linear expansion coefficient of the submount substrate (4) is smaller than the linear expansion coefficient of the semiconductor laser array (6); and the linear expansion coefficient of the submount substrate (4) when connected to the heat sink (3), which has a linear expansion coefficient higher than that of the semiconductor laser array (6), is set to be within a predetermined range which includes the linear expansion coefficient of the semiconductor laser array (6).
(FR)
La présente invention a trait à une structure de module peu coûteuse permettant d'exciter un réseau de diodes lasers à une faible contrainte et à une température appropriée. Le module est équipé d'un puits de chaleur (3) permettant de libérer la chaleur provenant d'un élément qui vient en contact avec celui-ci, d'un substrat de support secondaire (4) disposé sur le puits de chaleur (3) et configuré à partir d'un matériau isolant, d'une couche d'alimentation (5A) disposée sur le substrat de support secondaire (4) et d'un réseau de diodes lasers (6) doté d'une pluralité d'éléments électroluminescents disposés en parallèle sur la couche d'alimentation (5A). Le coefficient de dilatation linéique du substrat de support secondaire (4) est inférieur au coefficient de dilatation linéique du réseau de diodes lasers (6) ; et le coefficient de dilatation linéique du substrat de support secondaire (4) lorsqu'il est connecté au puits de chaleur (3), qui est pourvu d'un coefficient de dilatation linéique supérieur à celui du réseau de diodes lasers (6), est défini de manière à se situer dans une plage prédéterminée qui inclut le coefficient de dilatation linéique du réseau de diodes lasers (6).
(JA)
 LDアレイを低応力かつ適切な温度で駆動することが可能な安価なモジュール構造を得る。 接触する部材からの熱を放熱するヒートシンク3と、ヒートシンク3上に配置され、絶縁材料で構成されたサブマウント基板4と、サブマウント基板4上に配置される給電層5Aと、給電層5Aの上に並列配置される複数の発光部を有する半導体レーザアレイ6とを備え、サブマウント基板4の線膨張係数を半導体レーザアレイ6の線膨張係数よりも小さくし、半導体レーザアレイ6よりも大きい線膨張係数を有するヒートシンク3と接続された状態でのサブマウント基板4の線膨張係数が、半導体レーザアレイ6の線膨張係数を含む所定の範囲内となるようにした。
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