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1. WO2011065316 - ドーパントホスト及びその製造方法

公開番号 WO/2011/065316
公開日 03.06.2011
国際出願番号 PCT/JP2010/070764
国際出願日 22.11.2010
IPC
H01L 21/223 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
22半導体本体へのまたは半導体本体からのまたは半導体領域間の不純物材料,例.ドーピング材料,電極材料,の拡散;不純物材料の再分布,例.さらなるドーパントの導入または除去をしないもの
223気相から固体へのまたは固体から気相への拡散を用いるもの
CPC
C04B 2237/062
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2237Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
04Ceramic interlayers
06Oxidic interlayers
062based on silica or silicates
C04B 2237/064
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2237Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
04Ceramic interlayers
06Oxidic interlayers
064based on alumina or aluminates
C04B 2237/341
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2237Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
32Ceramic
34Oxidic
341Silica or silicates
C04B 2237/343
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2237Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
32Ceramic
34Oxidic
343Alumina or aluminates
C04B 35/18
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
35Shaped ceramic products characterised by their composition
01based on oxide ceramics
16based on silicates other than clay
18rich in aluminium oxide
H01L 21/2225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
2225Diffusion sources
出願人
  • 日本電気硝子株式会社 NIPPON ELECTRIC GLASS CO., LTD. [JP]/[JP] (AllExceptUS)
  • 鈴木 良太 SUZUKI, Ryota [JP]/[JP] (UsOnly)
  • 馬屋原 芳夫 UMAYAHARA, Yoshio [JP]/[JP] (UsOnly)
発明者
  • 鈴木 良太 SUZUKI, Ryota
  • 馬屋原 芳夫 UMAYAHARA, Yoshio
代理人
  • 目次 誠 METSUGI, Makoto
優先権情報
2009-26591624.11.2009JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) DOPANT HOST AND PROCESS FOR PRODUCTION THEREOF
(FR) HÔTE D'AGENT DOPANT ET SON PROCÉDÉ DE FABRICATION
(JA) ドーパントホスト及びその製造方法
要約
(EN)
Disclosed is a dopant host, of which the volatilization volume of B2O3 is rarely reduced over time, and which can exhibit a good B2O3 volatilization ability for a long period. The dopant host comprises a laminate which comprises: a boron component volatilization layer comprising, in mol%, 30 to 60% of SiO2, 10 to 30% of Al2O3, 15 to 50% of B2O3 and 2 to 15% of RO (wherein R represents an alkali earth metal element); and a heat-resistant layer comprising, in mol%, 8 to 40% of SiO2, 40 to 85% of Al2O3, 5 to 30% of B2O3 and 0.5 to 7% of RO (wherein R represents an alkali earth metal element). At least one of the outermost layers of the laminate is composed of the boron component volatilization layer. The laminate additionally comprises a boron component volatilization layer as mentioned above in the inside thereof. The B2O3 content in the boron volatilization layer that constitutes the above-mentioned at least one of the outermost layers of the laminate is lower than that in the boron component volatilization layer that is arranged in the inside of the laminate.
(FR)
L'invention porte sur un hôte d'agent dopant, dont le volume de volatilisation de B2O3 n'est guère réduit au cours du temps, et qui peut présenter une bonne aptitude à la volatilisation de B2O3 pendant une longue période de temps. L'hôte d'agent dopant comprend un stratifié qui comprend : une couche de volatilisation du composant bore comprenant, en % en moles, 30 à 60 % de SiO2, 10 à 30 % d'Al2O3, 15 à 50 % de B2O3 et 2 à 15 % de RO (où R représente un élément des métaux alcalino-terreux); et une couche résistant à la chaleur comprenant, en % en moles, 8 à 40 % de SiO2, 40 à 85 % d'Al2O3, 5 à 30 % de B2O3 et 0,5 à 7 % de RO (où R représente un élément des métaux alcalino-terreux). Au moins l'une des couches les plus extérieures du stratifié est composée de la couche de volatilisation du composant bore. Le stratifié comprend en outre une couche de volatilisation du composant bore telle que mentionnée ci-dessus à l'intérieur de celui-ci. La teneur en B2O3 dans la couche de volatilisation du bore qui constitue au moins l'une des couches les plus extérieures mentionnées ci-dessus du stratifié est inférieure à celle dans la couche de volatilisation du composant bore qui est disposée à l'intérieur du stratifié.
(JA)
 経時的にB揮発量が低下しにくく、長期にわたって良好なB揮発能を有するドーパントホストを提供する。 ドーパントホストは、モル%表示で、SiO 30~60%、Al 10~30%、B 15~50%及びRO(Rはアルカリ土類金属) 2~15%を含有するホウ素成分揮発層と、SiO 8~40%、Al 40~85%、B 5~30%及びRO(Rはアルカリ土類金属) 0.5~7%を含有する耐熱層とを含む積層体を有する。積層体の少なくとも一方の最外層がホウ素成分揮発層により構成されている。積層体は、積層体内部にホウ素成分揮発層をさらに含む。積層体の少なくとも一方の最外層を構成しているホウ素成分揮発層におけるBの含有率が、積層体内部のホウ素成分揮発層におけるBの含有率よりも低い。
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