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1. WO2011064920 - 固体撮像装置

公開番号 WO/2011/064920
公開日 03.06.2011
国際出願番号 PCT/JP2010/004906
国際出願日 04.08.2010
IPC
H01L 27/146 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
144輻射線によって制御される装置
146固体撮像装置構造
H01L 27/14 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
H04N 5/335 2011.01
H電気
04電気通信技術
N画像通信,例.テレビジョン
5テレビジョン方式の細部
30光または類似信号から電気信号への変換
335固体撮像素子を用いるもの
H04N 9/07 2006.01
H電気
04電気通信技術
N画像通信,例.テレビジョン
9カラーテレビジョン方式の細部
04画像信号発生装置
071つの撮像装置のみを有するもの
CPC
H01L 27/14603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
H01L 27/14609
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
H01L 27/14621
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14621Colour filter arrangements
H01L 27/1463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1463Pixel isolation structures
H01L 27/14632
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14632Wafer-level processed structures
H01L 27/1464
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1464Back illuminated imager structures
出願人
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP] (AllExceptUS)
  • 森三佳 MORI, Mitsuyoshi (UsOnly)
  • 沖野徹 OKINO, Toru (UsOnly)
  • 廣瀬裕 HIROSE, Yutaka (UsOnly)
  • 加藤剛久 KATO, Yoshihisa (UsOnly)
発明者
  • 森三佳 MORI, Mitsuyoshi
  • 沖野徹 OKINO, Toru
  • 廣瀬裕 HIROSE, Yutaka
  • 加藤剛久 KATO, Yoshihisa
代理人
  • 前田弘 MAEDA, Hiroshi
優先権情報
2009-26755025.11.2009JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLID-STATE IMAGE PICKUP DEVICE
(FR) DISPOSITIF D'ENREGISTREMENT D'IMAGE À L'ÉTAT SOLIDE
(JA) 固体撮像装置
要約
(EN)
Disclosed is a solid-state image pickup device which has: a semiconductor substrate (1); a plurality of n-type photoelectric conversion sections (11), which are formed in matrix at the upper part of the semiconductor substrate (1); an output circuit (12), which is formed on a charge detection surface, i.e., one surface of the semiconductor substrate (1), and detects charges accumulated in the photoelectric conversion sections (11); a plurality of p-type isolating diffusion layers (10), which are formed on the lower side of the output circuit (12), and include high-concentration p-type layers in contact with the photoelectric conversion sections (11); and color filters (17, 18, 19), which are formed on the light inputting surface of the semiconductor substrate (1) and transmit light having different wavelengths, said light inputting surface being the semiconductor substrate surface on the reverse side of said surface. The shapes of the photoelectric conversion sections (11) vary depending on the high-concentration p-type layers that configure the isolating diffusion layers (10), corresponding to the color filters (17, 18, 19).
(FR)
L'invention concerne un dispositif d'enregistrement d'image à l'état solide qui comporte : un substrat semi-conducteur (1) ; une pluralité de sections de conversion photoélectrique de type n (11) qui sont formées en matrice sur la partie supérieure du substrat semi-conducteur (1) ; un circuit de sortie (12) qui est formé sur une surface de détection de charge, c.-à-d. une surface du substrat semi-conducteur (1) qui détecte les charges accumulées dans les sections de conversion photoélectrique (11) ; une pluralité de couche de diffusion isolantes de type p (10) qui sont formées sur le côté inférieur du circuit de sortie (12) et comprennent des couches de type p à haute concentration en contact avec les sections de conversion photoélectrique (11) ; et des filtres de couleur (17, 18, 19) qui sont formés sur la surface d'entrée de lumière du substrat semi-conducteur (1) et transmettent de la lumière de différentes longueurs d'ondes, ladite surface d'entrée de lumière étant la surface du substrat semi-conducteur sur le côté opposé de ladite surface. Les formes des sections de conversion photoélectrique (10) varient selon les couches de type p à haute concentration qui configurent les couches de diffusion isolantes (10), correspondant aux filtres de couleur (17, 18, 19).
(JA)
 固体撮像装置は、半導体基板(1)と、該半導体基板(1)の上部に行列状に配置して形成されたn型の複数の光電変換部(11)と、半導体基板(1)の一の面である電荷検出面に形成され、光電変換部(11)に蓄積される電荷を検出する出力回路(12)と、該出力回路(12)の下側に形成され、各光電変換部(11)と接する高濃度p型層を含むp型の複数の分離拡散層(10)と、半導体基板(1)における一の面と対向する他の面である光入射面に形成され、異なる波長の光を透過するカラーフィルタ(17)、(18)及び(19)とを有している。各光電変換部11の形状は、カラーフィルタ(17)、(18)及び(19)と対応して、分離拡散層(10)を構成する高濃度p型層により異なる。
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