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1. WO2010134298 - 発光ダイオード及び発光ダイオードランプ、並びに照明装置

公開番号 WO/2010/134298
公開日 25.11.2010
国際出願番号 PCT/JP2010/003239
国際出願日 13.05.2010
IPC
H01L 33/44 2010.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
33光の放出に特に適用される少なくとも1つの電位障壁または表面障壁を有する半導体装置;それらの装置またはその部品の製造,あるいは処理に特に適用される方法または装置;それらの装置の細部
44コーティングに特徴があるもの,例.パシベーション層,反射防止コーティング
CPC
H01L 2224/45144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45144Gold (Au) as principal constituent
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/73265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
732Location after the connecting process
73251on different surfaces
73265Layer and wire connectors
H01L 33/305
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
305characterised by the doping materials
H01L 33/382
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
382the electrode extending partially in or entirely through the semiconductor body
H01L 33/40
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
出願人
  • 昭和電工株式会社 SHOWA DENKO K.K. [JP]/[JP] (AllExceptUS)
  • 鍋倉亙 NABEKURA, Wataru [JP]/[JP] (UsOnly)
  • 竹内良一 TAKEUCHI, Ryouichi [JP]/[JP] (UsOnly)
発明者
  • 鍋倉亙 NABEKURA, Wataru
  • 竹内良一 TAKEUCHI, Ryouichi
代理人
  • 志賀正武 SHIGA, Masatake
優先権情報
2009-12404822.05.2009JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND LIGHTING APPARATUS
(FR) DIODE ÉLECTROLUMINESCENTE, LAMPE À DIODE ÉLECTROLUMINESCENTE ET APPAREIL D'ÉCLAIRAGE
(JA) 発光ダイオード及び発光ダイオードランプ、並びに照明装置
要約
(EN)
Disclosed is a light emitting diode having high output/high efficiency and a long life even in highly humid environments. The light emitting diode (1) is provided with a compound semiconductor layer (2) which has a light emitting section (7), ohmic electrodes (4, 5) which are provided on the main light extraction surface of the compound semiconductor layer (2), and an electrode protection layer (6) for protecting the ohmic electrodes (4, 5). The Al concentration and As concentration of the surfaces (2a, 2b) of the compound semiconductor layer (2) which includes the main light extraction surface are respectively less than or equal to 20% and less than 1%. The electrode protection layer (6) comprises a two layer structure formed from a first protective film (12) provided so as to cover the ohmic electrodes (4, 5) and a second protective film (13) provided so as to cover at least the ends of the first protective film (12).
(FR)
La présente invention a trait à une diode électroluminescente ayant un rendement élevé/une efficacité élevée et une longue durée de vie y compris dans des environnements hautement humides. La diode électroluminescente (1) est équipée d'une couche semi-conductrice composée (2) qui est pourvue d'une partie électroluminescente (7), d'électrodes ohmiques (4, 5) qui sont disposées sur la surface d'extraction de la lumière principale de la couche semi-conductrice composée (2), et d'une couche de protection d'électrode (6) permettant de protéger les électrodes ohmiques (4, 5). La concentration de Al et la concentration de As des surfaces (2a, 2b) de la couche semi-conductrice composée (2) qui inclut la surface d'extraction de la lumière principale sont respectivement inférieure ou égale à 20 % et inférieure à 1 %. La couche de protection d'électrode (6) comprend une structure bicouche constituée d'un premier film de protection (12) disposé de manière à recouvrir les électrodes ohmiques (4, 5) et d'un second film de protection (13) disposé de manière à recouvrir au moins les extrémités du premier film de protection (12).
(JA)
高出力・高効率であって高湿環境下で長寿命の発光ダイオードを提供する。発光部(7)を有する化合物半導体層(2)と、化合物半導体層(2)の主たる光取り出し面に設けられたオーミック電極(4),(5)と、オーミック電極(4),(5)を保護するための電極保護層(6)と、を備えた発光ダイオード(1)であって、主たる光取り出し面を含む化合物半導体層(2)の表面(2a),(2b)のAl濃度が20%以下且つAs濃度が1%未満であり、電極保護層(6)が、オーミック電極(4),(5)を覆うように設けられた第1の保護膜(12)と、少なくとも第1の保護膜(12)の端部を覆うように設けられた第(2)の保護膜(13)とからなる二層構造を有することを特徴とする発光ダイオード(1)を採用する。
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