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出願の表示

1. WO2010131679 - 半導体装置

公開番号 WO/2010/131679
公開日 18.11.2010
国際出願番号 PCT/JP2010/058049
国際出願日 12.05.2010
IPC
H01L 25/07 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
03すべての装置がグループH01L27/00~H01L51/00の同じサブグループに分類される型からなるもの,例.整流ダイオードの組立体
04個別の容器を持たない装置
07装置がグループH01L29/00に分類された型からなるもの
H01L 21/60 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
50サブグループH01L21/06~H01L21/326の一つに分類されない方法または装置を用いる半導体装置の組立
60動作中の装置にまたは装置から電流を流すためのリードまたは他の導電部材の取り付け
H01L 25/04 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
03すべての装置がグループH01L27/00~H01L51/00の同じサブグループに分類される型からなるもの,例.整流ダイオードの組立体
04個別の容器を持たない装置
H01L 25/18 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
18装置がグループH01L27/00~H01L51/00の同じメイングループの2つ以上の異なるサブグループに分類される型からなるもの
CPC
H01L 2223/6611
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6605High-frequency electrical connections
6611Wire connections
H01L 2224/291
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
H01L 2224/29111
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29101the principal constituent melting at a temperature of less than 400°C
29111Tin [Sn] as principal constituent
H01L 2224/32221
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
H01L 2224/32225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/37147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
36Structure, shape, material or disposition of the strap connectors prior to the connecting process
37of an individual strap connector
37001Core members of the connector
37099Material
371with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
37138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
37147Copper [Cu] as principal constituent
出願人
  • ローム株式会社 ROHM CO., LTD. [JP]/[JP] (AllExceptUS)
  • 吉原 克彦 YOSHIHARA, Katsuhiko [JP]/[JP] (UsOnly)
  • 石井 勝 ISHII, Masaru [JP]/[JP] (UsOnly)
  • 北黒 弘一 KITAGURO, Kouichi [JP]/[JP] (UsOnly)
発明者
  • 吉原 克彦 YOSHIHARA, Katsuhiko
  • 石井 勝 ISHII, Masaru
  • 北黒 弘一 KITAGURO, Kouichi
代理人
  • 稲岡 耕作 INAOKA, Kosaku
優先権情報
2009-11727114.05.2009JP
2009-23001701.10.2009JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF A SEMI-CONDUCTEURS
(JA) 半導体装置
要約
(EN)
Disclosed is a semiconductor device having a structure capable of reducing the self inductance of internal wiring. The semiconductor device comprises: lower boards having lower conductor layers formed on the surfaces thereof; switching elements which are respectively joined to the lower conductor layers in element joint areas; terminals which are each joined to the lower conductor layers in terminal joint areas; upper boards which are each laminated on the lower boards in board joint areas between each element joint area and each terminal joint area and which each have an upper conductor layer on the surfaces thereof; and switching element connecting members which each connect the switching elements with the upper conductor layers.
(FR)
La présente invention concerne un dispositif à semi-conducteurs présentant une structure capable de réduire une inductance propre d'un câblage interne. Le dispositif à semi-conducteurs comporte : des cartes inférieures comprenant des couches conductrices formées sur leurs surfaces ; des éléments de commutation qui sont assemblés respectivement aux couches inférieures conductrices dans des zones de jonction d'éléments ; des bornes qui sont chacune assemblées aux couches inférieures conductrices dans des zones de jonctions de bornes ; des cartes supérieures qui sont chacune stratifiées sur les cartes inférieures dans des zones de jonction de cartes entre chaque zone de jonction d'éléments et chaque zone de jonction de bornes et qui comportent chacune une couche conductrice supérieure sur leurs surfaces ; et des organes de connexion d'éléments de commutation qui connectent chacun les éléments de commutation avec les couches supérieures conductrices.
(JA)
 内部配線の自己インダクタンスを低減できる構造の半導体装置を提供する。 半導体装置は、表面に下部導体層が形成された下部基板と、下部導体層に素子接合領域で接合されたスイッチング素子と、下部導体層に端子接合領域で接合された端子と、素子接合領域と端子接合領域との間の基板接合領域において基板に積層され、表面に上部導体層を有する上部基板と、スイッチング素子と上部導体層とを接続するスイッチング素子接続部材とを含む。
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