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1. WO2010125728 - 太陽電池セルおよびその製造方法

公開番号 WO/2010/125728
公開日 04.11.2010
国際出願番号 PCT/JP2010/001394
国際出願日 02.03.2010
IPC
H01L 31/04 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
04光起電変換装置として使用されるもの
CPC
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/0236
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
H01L 31/02363
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
02363of the semiconductor body itself, e.g. textured active layers
H01L 31/028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
028including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/03682
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0368including polycrystalline semiconductors
03682including only elements of Group IV of the Periodic System
H01L 31/068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
出願人
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP] (AllExceptUS)
  • 藤川正洋 FUJIKAWA, Masahiro [JP]/[JP] (UsOnly)
  • 松野繁 MATSUNO, Shigeru [JP]/[JP] (UsOnly)
発明者
  • 藤川正洋 FUJIKAWA, Masahiro
  • 松野繁 MATSUNO, Shigeru
代理人
  • 高橋省吾 TAKAHASHI, Shogo
優先権情報
2009-11020629.04.2009JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLAR CELL AND METHOD OF PRODUCING SAME
(FR) CELLULE SOLAIRE ET SON PROCÉDÉ DE FABRICATION
(JA) 太陽電池セルおよびその製造方法
要約
(EN)
Disclosed is a solar cell with high photoelectric conversion efficiency, comprising a semiconductor substrate, a front surface textured section formed on the main surface of the light-receiving surface side of the semiconductor substrate, a semiconductor layer having a conductivity type and formed along the front surface textured section, and an anti reflection film formed on the light-receiving surface side of the semiconductor layer, wherein a passivation film is formed on the main surface of the back surface side of the semiconductor substrate, at least one opening section is provided in the passivation film, and a first back surface electrode, which overlaps all portions on the passivation film in the range occupied by the opening section and covers the opening section, and a second back surface electrode, which overlaps all portions on the passivation film in the range occupied by the first back surface electrode and covers the first back surface electrode, are formed, whereby a partial back surface electrode, which does not suffer from electrode peeling or high resistance of an electrode conductor, is provided on the passivation film. Also disclosed is a method of producing the same.
(FR)
L'invention porte sur une cellule solaire de rendement élevé en conversion photoélectrique, qui comporte un substrat semi-conducteur, une section texturée de surface antérieure formée sur la surface principale du côté de la surface de réception de lumière du substrat semi-conducteur, une couche semi-conductrice ayant un certain type de conductivité et formée le long de la section texturée de surface antérieure, et un film antireflet formé sur le côté de la surface de réception de lumière de la couche semi-conductrice, un film de passivation étant formé sur la surface principale du côté de la surface postérieure du substrat semi-conducteur, au moins une section d'ouverture étant disposée dans le film de passivation, et une première électrode de surface postérieure, chevauchant toutes les parties du film de passivation dans l'étendue occupée par la section d'ouverture et recouvrant la section d'ouverture, et une seconde électrode de surface postérieure, chevauchant toutes les parties sur le film de passivation dans l'étendue occupée par la première électrode de surface postérieure et recouvrant la première électrode de surface postérieure, étant formées, permettant ainsi à une électrode de surface postérieure partielle, qui ne souffre ni de décollement d'électrode, ni de résistance élevée d'un conducteur d'électrode, d'être disposée sur le film de passivation. L'invention concerne également un procédé de fabrication de celle-ci.
(JA)
 半導体基板と、前記半導体基板の受光面側の主面上に形成された表面凹凸部と、該表面凹凸部に沿って形成された導電型を有する半導体層と、該半導体層の受光面側に形成された反射防止膜とを有する太陽電池セルにおいて、前記半導体基板の裏面側の主面上にパッシベーション膜を形成し、該パッシベーション膜に少なくとも1つの開口部を設け、前記パッシベーション膜上で前記開口部が占める範囲の全ての部分と重複し、かつ、前記開口部を覆う第1の裏面電極と、前記パッシベーション膜上で前記第1の裏面電極が占める範囲の全ての部分と重複し、かつ、前記第1の裏面電極を覆う第2の裏面電極とで形成することで、電極剥離や電極導体の高抵抗が起こらないような部分的な裏面電極をパッシベーション膜上に有する光電子変換効率の高い太陽電池セルおよびその製造方法を提供する。
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