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1. WO2010122795 - 半導体装置

公開番号 WO/2010/122795
公開日 28.10.2010
国際出願番号 PCT/JP2010/002899
国際出願日 22.04.2010
IPC
H01L 21/52 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
50サブグループH01L21/06~H01L21/326の一つに分類されない方法または装置を用いる半導体装置の組立
52容器中への半導体本体のマウント
H01L 23/50 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
48動作中の固体本体からまたは固体本体へ電流を導く装置,例.リードまたは端子装置
50集積回路装置用
CPC
H01L 21/563
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
H01L 2224/29
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
H01L 2224/291
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
H01L 2224/29101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29101the principal constituent melting at a temperature of less than 400°C
H01L 2224/29111
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29101the principal constituent melting at a temperature of less than 400°C
29111Tin [Sn] as principal constituent
H01L 2224/29113
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29101the principal constituent melting at a temperature of less than 400°C
29113Bismuth [Bi] as principal constituent
出願人
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP] (AllExceptUS)
  • 中村太一 NAKAMURA, Taichi (UsOnly)
  • 古澤彰男 FURUSAWA, Akio (UsOnly)
  • 酒谷茂昭 SAKATANI, Shigeaki (UsOnly)
  • 北浦秀敏 KITAURA, Hidetoshi (UsOnly)
  • 松尾隆広 MATSUO, Takahiro (UsOnly)
発明者
  • 中村太一 NAKAMURA, Taichi
  • 古澤彰男 FURUSAWA, Akio
  • 酒谷茂昭 SAKATANI, Shigeaki
  • 北浦秀敏 KITAURA, Hidetoshi
  • 松尾隆広 MATSUO, Takahiro
代理人
  • 原田洋平 HARADA, Yohei
優先権情報
2009-10349422.04.2009JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR
(JA) 半導体装置
要約
(EN)
Provided is a semiconductor device wherein dissipation of heat generated from a semiconductor element to a supporting body is improved, while ensuring sufficient bonding strength between the semiconductor element and a supporting board. The semiconductor device is provided with: the supporting board; an electrode surface processing layer formed on the supporting board; the semiconductor element; and a solder material wherein second metal particles, which have a melting point higher than that of a first metal having Bi as a main component, are contained in the first metal, and bonds together the electrode surface processing layer and the semiconductor element. In the solder material region which corresponds to the center portion of the semiconductor element, the composition ratio of the second metal is higher than that of the first metal, and in the region outside of the region that corresponds to the center portion, the composition ratio of the first metal is higher than that of the second metal, and the composition ratio of the second metal in the region that corresponds to the center portion is 83.8 atom % or higher.
(FR)
La présente invention concerne un dispositif semi-conducteur présentant une meilleure dissipation dans un corps support de la chaleur produite par un élément semi-conducteur, tout en garantissant une cohésion suffisante entre l'élément semi-conducteur et la plaque support. Ce dispositif semi-conducteur comporte: la plaque support; une couche superficiellement traitée en électrode réalisée sur la plaque support; l'élément semi-conducteur; et un matériau de soudure, qui est fait d'un premier métal essentiellement à base de bismuth, contenant des particules d'un second métal dont le point de fusion est supérieur à celui dudit premier métal dont le constituant principal est le bismuth, et qui fait tenir l'élément semi-conducteur à la couche superficiellement traitée en électrode. Dans la zone du matériau de soudure qui correspond à la partie centrale de l'élément semi-conducteur, le second métal est présent dans une proportion supérieure à celle du premier métal, alors que dans la zone extérieure à la zone correspondant à la partie centrale, le premier métal est présent dans une proportion supérieure à celle du second métal, la proportion atomique de second métal présent dans la zone correspondant à la zone centrale étant d'au moins 83,8 %.
(JA)
 本発明は、半導体素子と支持板との十分な接合強度を確保しつつ、半導体素子からの発熱の支持体への放熱性を向上させる半導体装置を提供することを課題とする。本発明に係る半導体装置は、支持板と、前記支持板上に形成された電極表面処理層と、半導体素子と、Biを主成分とする第1金属の内部に前記第1金属よりも融点が高い第2金属の粒子を含有しており、前記電極表面処理層と前記半導体素子とを接合するはんだ材料と、を備え、前記はんだ材料の前記半導体素子の中央部に対応する領域では前記第1金属よりも前記第2金属の組成比率が高く、前記中央部に対応する領域の外側の領域では前記第2金属よりも前記第1金属の組成比率が高く、前記中央部に対応する領域内での前記第2金属の組成比率が83.8原子%以上である。
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