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1. WO2010119830 - 発光ダイオード

公開番号 WO/2010/119830
公開日 21.10.2010
国際出願番号 PCT/JP2010/056511
国際出願日 12.04.2010
IPC
H01L 33/48 2010.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
33光の放出に特に適用される少なくとも1つの電位障壁または表面障壁を有する半導体装置;それらの装置またはその部品の製造,あるいは処理に特に適用される方法または装置;それらの装置の細部
48半導体素子本体のパッケージに特徴のあるもの
CPC
H01L 2224/45124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45117the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
45124Aluminium (Al) as principal constituent
H01L 2224/45144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45144Gold (Au) as principal constituent
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/84385
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
84using a strap connector
8438Bonding interfaces outside the semiconductor or solid-state body
84385Shape, e.g. interlocking features
H01L 33/486
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
483Containers
486adapted for surface mounting
H01L 33/58
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
出願人
  • パナソニック電工株式会社 PANASONIC ELECTRIC WORKS CO., LTD. [JP]/[JP] (AllExceptUS)
  • 浦野 洋二 URANO, Youji [JP]/[JP] (UsOnly)
発明者
  • 浦野 洋二 URANO, Youji
代理人
  • 西川 惠清 NISHIKAWA, Yoshikiyo
優先権情報
2009-09726513.04.2009JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) LIGHT-EMITTING DIODE
(FR) DIODE ÉLECTROLUMINESCENTE
(JA) 発光ダイオード
要約
(EN)
Disclosed is a light-emitting diode which comprises a light-emitting diode chip, a package housing the light-emitting diode chip, and a connection electrode that is electrically connected to an element electrode of the light-emitting diode chip. The package is a laminate that is composed of at least a submount substrate on one surface of which the light-emitting diode chip is mounted, and a frame member which is arranged on the surface of the submount substrate and provided with a through hole for housing the light-emitting diode chip. The connection electrode is formed on either the surface of the submount substrate and/or one surface of the frame member on the light irradiation side, and exposed towards the light irradiation side. Consequently, the light-emitting diode can have improved arrangement density and improved heat dissipation performance at the same time.
(FR)
La présente invention concerne une diode électroluminescente comprenant une puce à diode électroluminescente, un boîtier logeant la puce à diode électroluminescente et une électrode de connexion qui est électriquement connectée à une électrode composante de la puce à diode électroluminescente. Le boîtier est un stratifié, composé d'au moins un substrat de sous-monture sur une surface duquel est montée la puce à diode électroluminescente, et d'un élément d'armature, agencé sur la surface du substrat de sous-monture et pourvu d'un trou traversant pour loger la puce à diode électroluminescente. L'électrode de connexion est formée sur la surface du substrat de sous-monture et/ou une surface de l'élément d'armature du côté irradiation de lumière, et exposée vers le côté irradiation de lumière. En conséquence, la diode électroluminescente peut offrir à la fois une densité d'agencement améliorée et des performances de dissipation de chaleur améliorées.
(JA)
 発光ダイオードは、発光ダイオードチップと、前記発光ダイオードチップを収納するパッケージと、前記発光ダイオードチップが備える素子電極と電気的に接続される接続電極と、を備える。前記パッケージは、少なくとも、前記発光ダイオードチップが一表面に載設されるサブマウント基板と、前記サブマウント基板の前記一表面に積層され前記発光ダイオードチップを収納する貫通孔が形成される枠体と、からなる積層体である。前記接続電極は、前記サブマウント基板の前記一表面と、前記枠体における光の放射方向側の一面のうちの、少なくとも一方に形成されるとともに、前記光の放射方向側に露出している。従って、配置密度と放熱性能の両方を同時に向上させることができる。
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