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1. WO2010113946 - 処理装置

公開番号 WO/2010/113946
公開日 07.10.2010
国際出願番号 PCT/JP2010/055703
国際出願日 30.03.2010
IPC
H01L 21/205 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
20基板上への半導体材料の析出,例.エピタキシャル成長
205固体を析出させるガス状化合物の還元または分解を用いるもの,すなわち化学的析出を用いるもの
C23C 16/44 2006.01
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
16ガス状化合物の分解による化学的被覆であって,表面材料の反応生成物を被覆層中に残さないもの,すなわち化学蒸着(CVD)法
44被覆の方法に特徴のあるもの
H01L 21/3065 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
302表面の物理的性質または形状を変換するため,例.エッチング,ポリシング,切断
306化学的または電気的処理,例.電解エッチング
3065プラズマエッチング;反応性イオンエッチング
CPC
C23C 16/4402
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
4402Reduction of impurities in the source gas
C23C 16/448
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/4488
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
4488by in situ generation of reactive gas by chemical or electrochemical reaction
C23C 16/452
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
452by activating reactive gas streams before ; their; introduction into the reaction chamber, e.g. by ; ionisation; or addition of reactive species
C23C 16/45561
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45561Gas plumbing upstream of the reaction chamber
C23C 16/52
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
52Controlling or regulating the coating process
出願人
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • 守谷 修司 MORIYA Shuji [JP]/[JP] (UsOnly)
  • 進藤 豊彦 SHINDO Toyohiko [JP]/[JP] (UsOnly)
  • 田村 登 TAMURA Noboru [JP]/[JP] (UsOnly)
発明者
  • 守谷 修司 MORIYA Shuji
  • 進藤 豊彦 SHINDO Toyohiko
  • 田村 登 TAMURA Noboru
代理人
  • 勝沼 宏仁 KATSUNUMA Hirohito
優先権情報
2009-08833231.03.2009JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) TREATMENT DEVICE
(FR) DISPOSITIF DE TRAITEMENT
(JA) 処理装置
要約
(EN)
A treatment device equipped with a treatment vessel for treating an object to be treated, the treatment device comprising: a gas supply passage for supplying a corrosive gas comprising a halogen to the treatment vessel, at least some of the passage being constituted of a metal; a stabilization reaction part which has an energy generator for supplying light energy or heat energy to the corrosive gas that has passed through the metallic part of the gas supply passage and/or has an obstacle disposed so that the corrosive gas that has passed through the metallic part of the gas supply passage hits thereagainst to thereby generate impact energy that acts on the corrosive gas, and in which a reaction for stabilizing a compound containing the halogen, which is contained in the corrosive gas, and the metal takes place by means of at least one of the light energy, heat energy, and impact energy; and a trapping means which traps the compound stabilized in the stabilization reaction part.
(FR)
L'invention concerne un dispositif de traitement comprenant un récipient de traitement pour traiter un objet devant être traité, le dispositif de traitement comprenant : un passage d'alimentation en gaz pour fournir un gaz corrosif comprenant un halogène au récipient de traitement, au moins une partie du passage étant constituée d'un métal ; une partie de réaction de stabilisation comportant un générateur d'énergie pour fournir de l'énergie lumineuse ou de l'énergie thermique au gaz corrosif ayant traversé la partie métallique du passage d'alimentation en gaz et/ou comportant un obstacle disposé de telle sorte que le gaz corrosif ayant traversé la partie métallique du passage d'alimentation en gaz frappe contre celui-ci pour générer ainsi une énergie d'impact agissant sur le gaz corrosif, et dans lequel une réaction pour stabiliser un composé contenant l'halogène, contenu dans le gaz corrosif, et le métal est effectuée au moyen de l'énergie lumineuse et/ou de l'énergie thermique et/ou de l'énergie d'impact ; et un moyen de piégeage piégeant le composé stabilisé dans la partie de réaction de stabilisation.
(JA)
 被処理体に対して処理を行うための処理容器を備えた処理装置は、少なくとも一部が金属により構成され、ハロゲンを含む腐食性ガスを前記処理容器に供給するためのガス供給流路と、前記ガス供給流路における金属部分を通流した前記腐食性ガスに光エネルギーまたは熱エネルギーを供給するエネルギー発生器、および前記ガス供給流路における金属部分を通流した前記腐食性ガスを衝突させることにより前記腐食性ガスに作用する衝突エネルギーを発生させるように設けられた障害物のうちの少なくとも一つを有し、前記光エネルギー、熱エネルギーおよび衝突エネルギーのうちの少なくとも一つにより前記腐食性ガスに含まれるハロゲンと前記金属とを含む化合物を安定化させる反応が行われる安定化反応処理部と、前記安定化反応処理部において安定化された化合物を捕捉する捕捉手段と、を備える。
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