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1. WO2010074283 - パッシベーション膜形成用成膜装置及び成膜方法、並びに太陽電池素子の製造方法

公開番号 WO/2010/074283
公開日 01.07.2010
国際出願番号 PCT/JP2009/071767
国際出願日 28.12.2009
IPC
H01L 31/04 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
04光起電変換装置として使用されるもの
CPC
C23C 16/5096
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
505using radio frequency discharges
509using internal electrodes
5096Flat-bed apparatus
H01L 31/02167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
H01L 31/1868
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
1868Passivation
出願人
  • 株式会社アルバック ULVAC, INC. [JP]/[JP] (AllExceptUS)
  • 久保 昌司 KUBO Masashi [JP]/[JP] (UsOnly)
  • 菊地 誠 KIKUCHI Makoto [JP]/[JP] (UsOnly)
  • 斎藤 一也 SAITO Kazuya [JP]/[JP] (UsOnly)
  • 渡井 美和 WATAI Miwa [JP]/[JP] (UsOnly)
  • 清水 美穂 SHIMIZU Miho [JP]/[JP] (UsOnly)
発明者
  • 久保 昌司 KUBO Masashi
  • 菊地 誠 KIKUCHI Makoto
  • 斎藤 一也 SAITO Kazuya
  • 渡井 美和 WATAI Miwa
  • 清水 美穂 SHIMIZU Miho
代理人
  • 栗原浩之 KURIHARA Hiroyuki
優先権情報
2008-33505126.12.2008JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) FILM-FORMING DEVICE AND FILM-FORMING METHOD FOR FORMING PASSIVATION FILMS AS WELL AS MANUFACTURING METHOD FOR SOLAR CELL ELEMENTS
(FR) DISPOSITIF ET PROCÉDÉ DE FORMATION DE FILMS POUR FORMER DES FILMS DE PASSIVATION, AINSI QUE PROCÉDÉ DE FABRICATION D'ÉLÉMENTS DE CELLULES SOLAIRES
(JA) パッシベーション膜形成用成膜装置及び成膜方法、並びに太陽電池素子の製造方法
要約
(EN)
Provided are a film-forming method and a film-forming device for forming passivation films that can sufficiently inhibit loss due to carrier re-binding, and a solar cell element manufacturing method using same. The device is provided with a mounting part (22) for mounting the film-forming target, a high frequency power source (25), and a shower plate (23) that is provided to face the film-forming target (S) that is mounted on the mounting part (22), introduces the film-forming gas, and to which is connected the high frequency power source and to which a high frequency voltage is applied. A low frequency power source (26) is connected to the shower plate or the substrate-mounting part and applies a lower frequency voltage. The film-forming method is implemented using said film-forming device, and said film-forming method is implemented when forming passivation films.
(FR)
L'invention concerne un procédé et un dispositif de formation de films pour former des films de passivation qui peuvent atténuer suffisamment une perte causée par une liaison renouvelée de support, ainsi qu'un procédé de fabrication d'élément de cellule solaire associé. Ce dispositif comprend une partie de montage (22) servant à monter la cible de formation de films, une source d'alimentation haute fréquence (25), et une plaque de douche (23) destinée à être face à la cible de formation de films (S) qui est montée sur la partie de montage (22) et permet d'introduire le gaz de formation de films, une source d'alimentation haute fréquence étant connectée à ladite plaque et une tension haute fréquence étant appliquée à cette même plaque. Une source d'alimentation basse fréquence (26) est connectée à la plaque de douche ou à la partie de montage de substrat et elle applique une tension basse fréquence. Ce procédé de formation de films est mis en oeuvre au moyen d'un dispositif de formation de films, et lors de la formation de films de passivation.
(JA)
 キャリアの再結合による損失を十分に抑制できるパッシベーション膜を形成する成膜方法及び成膜装置、これを用いた太陽電池素子の製造方法を提供することを課題とする。成膜対象を載置する載置部22と、高周波電源25と、載置部22に載置された成膜対象Sに対向するように設けられ、成膜ガスを導入すると共に高周波電源が接続され高周波数の電圧が印加されるシャワープレート23とを備え、シャワープレート又は基板載置部に、低周波数の電圧を印加する低周波電源26が接続されている。この成膜装置を用いて成膜方法を実施し、パッシベーション膜を形成するにあたり、この成膜方法を実施する。
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