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1. WO2010061603 - 成膜装置、電子デバイスの製造方法

公開番号 WO/2010/061603
公開日 03.06.2010
国際出願番号 PCT/JP2009/006384
国際出願日 26.11.2009
IPC
C23C 14/34 2006.01
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
22被覆の方法に特徴のあるもの
34スパッタリング
H01L 21/31 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
31半導体本体上への絶縁層の形成,例.マスキング用またはフォトリソグラフィック技術の使用によるもの;これらの層の後処理;これらの層のための材料の選択
CPC
C23C 14/0036
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
0021Reactive sputtering or evaporation
0036Reactive sputtering
C23C 14/35
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
C23C 14/564
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
H01J 37/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
H01J 37/3447
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3411Constructional aspects of the reactor
3447Collimators, shutters, apertures
H01J 37/3464
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3464Operating strategies
出願人
  • キヤノンアネルバ株式会社 CANON ANELVA CORPORATION [JP]/[JP] (AllExceptUS)
  • 山口述夫 YAMAGUCHI, Nobuo [JP]/[JP] (UsOnly)
  • 真下公子 MASHIMO, Kimiko [JP]/[JP] (UsOnly)
  • 長澤慎也 NAGASAWA, Shinya [JP]/[JP] (UsOnly)
発明者
  • 山口述夫 YAMAGUCHI, Nobuo
  • 真下公子 MASHIMO, Kimiko
  • 長澤慎也 NAGASAWA, Shinya
代理人
  • 大塚康徳 OHTSUKA, Yasunori
優先権情報
2008-30556728.11.2008JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) FILM FORMING APPARATUS AND METHOD OF MANUFACTURING ELECTRONIC DEVICE
(FR) APPAREIL DE FORMATION DE FILM ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF ÉLECTRONIQUE
(JA) 成膜装置、電子デバイスの製造方法
要約
(EN)
A film forming apparatus is provided with a shutter containing section connected to a processing chamber via an opening and containing a shutter in a retracted state into a gas discharge chamber, and a shield member for covering the gas discharge opening of the gas discharge chamber and formed around the opening of the shutter containing section.  The shield member is provided with a first gas discharge path communicating with the gas discharge opening of the gas discharge chamber and located at a predetermined height between the opening of the shutter containing section and a film forming means.
(FR)
L'invention porte sur un appareil de formation de film qui est pourvu d’une section contenant un volet obturateur reliée à une chambre de traitement par l'intermédiaire d'une ouverture et contenant un volet obturateur dans un état rétracté dans une chambre d’évacuation de gaz, et d’un élément de protection pour recouvrir l'ouverture d’évacuation de gaz de la chambre d’évacuation de gaz et qui est formé autour de l'ouverture de la section contenant un volet obturateur. L'élément de protection, qui est pourvu d’un premier trajet d’évacuation de gaz communiquant avec l'ouverture d’évacuation de gaz de la chambre d’évacuation de gaz, est situé à une hauteur prédéterminée entre l'ouverture de la section contenant un volet obturateur et un moyen de formation de film.
(JA)
 成膜装置は、処理チャンバーと開口部を介して接続され、退避状態のシャッターを排気チャンバー内に収納するためのシャッター収納部と、排気チャンバーの排気口を覆い、シャッター収納部の開口部の周囲に形成されているシールド部材と、を備え、シールド部材は、シャッター収納部の開口部と成膜手段との間との所定高さの位置に、排気チャンバーの排気口と通じる第1の排気路を有している。
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