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1. WO2009157079 - 太陽電池セルおよびその製造方法

公開番号 WO/2009/157079
公開日 30.12.2009
国際出願番号 PCT/JP2008/061665
国際出願日 26.06.2008
IPC
H01L 31/04 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
04光起電変換装置として使用されるもの
CPC
H01L 31/02167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/0504
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
0504specially adapted for series or parallel connection of solar cells in a module
H01L 31/068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
出願人
  • 三菱電機株式会社 Mitsubishi Electric Corporation [JP]/[JP] (AllExceptUS)
  • 濱 篤郎 HAMA, Atsuro [JP]/[JP] (UsOnly)
  • 森川 浩昭 MORIKAWA, Hiroaki [JP]/[JP] (UsOnly)
発明者
  • 濱 篤郎 HAMA, Atsuro
  • 森川 浩昭 MORIKAWA, Hiroaki
代理人
  • 酒井 宏明 SAKAI, Hiroaki
優先権情報
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLAR BATTERY CELL AND PROCESS FOR PRODUCING THE SAME
(FR) CELLULE DE BATTERIE SOLAIRE ET SON PROCÉDÉ DE FABRICATION
(JA) 太陽電池セルおよびその製造方法
要約
(EN)
A second conductivity type impurity diffusion layer and an antireflection film are formed on one side of a first conductivity type semiconductor substrate. A glass-containing first electrode material is coated on the antireflection film. A passivation film is formed on the other side of the semiconductor substrate. A plurality of opening parts, which reaches the other side of the semiconductor substrate, is formed in at least a part of the passivation film. A second electrode material containing the first conductivity type impurity element is coated so as to embed the plurality of opening parts and so as not to come into contact with the second electrode material in the adjacent opening part. A third electrode material is coated onto the passivation film so as to come into contact with the coated whole second electrode material. After coating the first electrode material and the third electrode material, the semiconductor substrate is heated at a predetermined temperature. The above constitution can realize simultaneous formation of a first electrode, which passes through the antireflection film and is electrically connected to the impurity diffusion layer, a high-concentration region, in which, on the other side of the semiconductor substrate, the first conductivity type impurity is diffused in a higher concentration than the other region of the semiconductor substrate, and the second and third electrodes electrically connected to the high-concentration region.
(FR)
Selon l'invention, une couche de diffusion d'impuretés d'un second type de conductivité et un film antireflet sont formés sur un côté d'un substrat semi-conducteur d'un premier type de conductivité. Un premier matériau d'électrode contenant du verre est déposé sous forme de revêtement sur le film antireflet. Un film de passivation est formé sur l'autre côté du substrat semi-conducteur. Plusieurs parties d'ouverture, qui atteignent l'autre côté du substrat semi-conducteur, sont formées dans au moins une partie du film de passivation. Un second matériau d'électrode contenant l'élément d'impureté de premier type de conductivité est déposé sous forme de revêtement de façon à incorporer les différentes parties d'ouverture et de façon à ne pas venir en contact avec le second matériau d'électrode dans la partie d'ouverture adjacente. Un troisième matériau d'électrode est déposé sous forme de revêtement sur le film de passivation de façon à venir en contact avec la totalité du second matériau d'électrode déposé sous forme de revêtement. Après dépôt sous forme de revêtement du premier matériau d'électrode et du troisième matériau d'électrode, le substrat semi-conducteur est chauffé à une température prédéterminée. La constitution ci-dessus peut permettre d'obtenir une formation simultanée d'une première électrode, qui passe à travers le film antireflet et est connectée électriquement à la couche de diffusion d'impuretés, d'une région à concentration élevée, dans laquelle, sur l'autre côté du substrat semi-conducteur, l'impureté de premier type de conductivité est diffusée dans une concentration supérieure à celle de l'autre région du substrat semi-conducteur, et des seconde et troisième électrodes connectées électriquement à la région à concentration élevée.
(JA)
 第1導電型の半導体基板の一面側に第2導電型の不純物拡散層および反射防止膜を形成し、反射防止膜上にガラスを含む第1電極材料を塗布し、半導体基板の他面側にパッシベーション膜を形成し、パッシベーション膜の少なくとも一部に半導体基板の他面側に達する複数の開口部を形成し、第1導電型の不純物元素を含む第2電極材料を、複数の開口部を埋めるように且つ隣接する開口部の第2電極材料と接触しないように塗布し、塗布された全ての第2電極材料と接触するように第3電極材料をパッシベーション膜上に塗布し、第1電極材料および第3電極材料の塗布後に半導体基板を所定の温度で加熱することにより、反射防止膜を貫通して不純物拡散層に電気的に接続する第1電極と、半導体基板の他面側において第1導電型の不純物が半導体基板の他の領域よりも高濃度に拡散した高濃度領域と、高濃度領域に電気的に接続する第2電極および第3電極と、を同時に形成する。
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