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1. WO2009101869 - 塗布・現像装置および塗布・現像方法

公開番号 WO/2009/101869
公開日 20.08.2009
国際出願番号 PCT/JP2009/051692
国際出願日 02.02.2009
IPC
H01L 21/027 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
027その後のフォトリソグラフィック工程のために半導体本体にマスクするもので,グループH01L21/18またはH01L21/34に分類されないもの
G03F 7/30 2006.1
G物理学
03写真;映画;光波以外の波を使用する類似技術;電子写真;ホログラフイ
Fフォトメカニカル法による凹凸化又はパターン化された表面の製造,例.印刷用,半導体装置の製造法用;そのための材料;そのための原稿;そのために特に適合した装置
7フォトメカニカル法,例.フォトリソグラフ法,による凹凸化又はパターン化された表面,例.印刷表面,の製造;そのための材料,例.フォトレジストからなるもの;そのため特に適合した装置
26感光材料の処理;そのための装置
30液体手段を用いる画像様除去
CPC
G03F 7/38
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
38Treatment before imagewise removal, e.g. prebaking
H01L 21/67109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67109mainly by convection
H01L 21/67115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67115mainly by radiation
H01L 21/6715
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
6715Apparatus for applying a liquid, a resin, an ink or the like
H01L 21/67178
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
67161characterized by the layout of the process chambers
67178vertical arrangement
出願人
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • 西 孝典 NISHI, Takanori [JP]/[JP] (UsOnly)
  • 北野 高広 KITANO, Takahiro [JP]/[JP] (UsOnly)
発明者
  • 西 孝典 NISHI, Takanori
  • 北野 高広 KITANO, Takahiro
代理人
  • 高山 宏志 TAKAYAMA, Hiroshi
優先権情報
2008-03511715.02.2008JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) APPLYING/DEVELOPING APPARATUS, AND APPLYING/DEVELOPING METHOD
(FR) APPAREIL D'APPLICATION/DÉVELOPPEMENT ET PROCÉDÉ D'APPLICATION/DÉVELOPPEMENT
(JA) 塗布・現像装置および塗布・現像方法
要約
(EN) A substrate, which has been so exposed along a pattern by an exposure device that the quantity of energy to be fed to a resist film may not exceed a range intrinsic to the resist, is received from a transfer mechanism and transferred to a heating module. The entire resist film is fed by the heating module with energy in a quantity not exceeding the intrinsic range but in such a sum of the quantity of the energy fed at the exposing time as exceeds the intrinsic range. The substrate is heated by the heating plate, thereby to change the solubility.
(FR) Selon l'invention, un substrat, qui a été exposé le long d'un motif par un dispositif d'exposition de telle manière que la quantité d'énergie devant être appliquée à un film de résist ne peut pas dépasser une plage intrinsèque au résist, est reçu à partir d'un mécanisme de transfert et transféré à un module de chauffage. Le module de chauffage applique au film de résist entier de l'énergie en une quantité ne dépassant pas la plage intrinsèque mais qui, additionnée à la quantité d'énergie appliquée au moment de l'exposition, dépasse la plage intrinsèque. Le substrat est chauffé par la plaque chauffante, ce qui permet ainsi de changer la solubilité.
(JA)  レジスト膜に供給されるエネルギー量が、そのレジスト固有の範囲を越えないように露光装置にてパターンに沿って露光された基板を受け渡し機構により受け取り、加熱モジュールに受け渡して、加熱モジュールにてレジスト膜全体に、前記固有の範囲を越えない量のエネルギーであって、露光時に供給されたエネルギー量との総和は前記固有の範囲を越えるエネルギーを供給し、当該基板を加熱板により加熱して前記溶解性を変化させる。
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