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1. WO2009078153 - 光電変換素子製造装置及び方法、並びに光電変換素子

公開番号 WO/2009/078153
公開日 25.06.2009
国際出願番号 PCT/JP2008/003734
国際出願日 12.12.2008
IPC
C23C 16/511 2006.01
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
16ガス状化合物の分解による化学的被覆であって,表面材料の反応生成物を被覆層中に残さないもの,すなわち化学蒸着(CVD)法
44被覆の方法に特徴のあるもの
50放電を用いるもの
511マイクロ波放電を用いるもの
H01L 31/04 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
04光起電変換装置として使用されるもの
CPC
C23C 16/24
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
24Deposition of silicon only
C23C 16/511
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
511using microwave discharges
H01L 31/028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
028including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
H01L 31/0745
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0745comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
出願人
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • 国立大学法人東北大学 TOHOKU UNIVERSITY [JP]/[JP] (AllExceptUS)
  • 大見忠弘 OHMI, Tadahiro [JP]/[JP] (UsOnly)
  • 寺本章伸 TERAMOTO, Akinobu [JP]/[JP] (UsOnly)
  • 後藤哲也 GOTO, Tetsuya [JP]/[JP] (UsOnly)
  • 田中宏治 TANAKA, Kouji [JP]/[JP] (UsOnly)
発明者
  • 大見忠弘 OHMI, Tadahiro
  • 寺本章伸 TERAMOTO, Akinobu
  • 後藤哲也 GOTO, Tetsuya
  • 田中宏治 TANAKA, Kouji
代理人
  • 友野英三 TOMONO, Eizo
優先権情報
2007-32679719.12.2007JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) APPARATUS AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENTS, AND PHOTOELECTRIC CONVERSION ELEMENT
(FR) APPAREIL ET PROCÉDÉ DE FABRICATION D'ÉLÉMENTS DE CONVERSION PHOTOÉLECTRIQUES ET ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE ASSOCIÉ
(JA) 光電変換素子製造装置及び方法、並びに光電変換素子
要約
(EN)
Provided are an apparatus and a method for manufacturing photoelectric conversion elements, and a photoelectric conversion element, the apparatus and method being capable of highly efficiently forming a film at a high speed with microwave plasma, preventing oxygen from mixing, and reducing the number of defects. The invention provides a photoelectric conversion element manufacturing apparatus 100 that forms a semiconductor layer film on a substrate W by microwave plasma CVD. The apparatus 100 includes a chamber 10, the chamber 10 being an enclosed space containing a base, a substrate W of a subject for thin-film formation being mounted on the base, a first gas supply unit 40 that supplies a plasma excitation region in the chamber 10 with plasma excitation gas, a pressure regulation unit 70 that regulates the pressure in the chamber 10, a second gas supply unit 50 that supplies a plasma diffusion region in the chamber 10 with raw gas, a microwave application unit 20 that applies microwaves into the chamber 10, and a bias voltage application unit 60 that selects and applies a substrate bias voltage to the substrate W in accordance with the type of gas.
(FR)
L'invention concerne un appareil et un procédé de fabrication d'éléments de conversion photoélectriques, ainsi qu'un élément de conversion photoélectrique associé. L'appareil et le procédé de l'invention permettent de former un film de manière hautement efficace, à vitesse élevée, au moyen de plasma micro-onde, en évitant que l'oxygène ne se mélange et en produisant un nombre de défauts réduit. L'invention concerne un appareil de fabrication d'éléments de conversion photoélectriques (100) permettant de former un film à couches semiconducteur sur un substrat (W) par un procédé de dépôt chimique en phase vapeur assisté par plasma micro-onde. Cet appareil (100) comprend: un compartiment (10) qui est renfermé dans un espace contenant une base, un substrat (W) destiné à la formation d'un film mince et monté sur la base, une première unité d'alimentation en gaz (40) permettant d'alimenter une zone d'excitation plasma du compartiment (10) en gaz d'excitation plasma, une unité de régulation de pression (70) qui régule la pression dans le compartiment (10), une seconde unité d'alimentation en gaz (50) qui alimente une zone de diffusion de plasma du compartiment (10) en gaz brut, une unité d'application de micro-ondes (20) qui applique des micro-ondes dans le compartiment (10), et une unité d'application de tension de polarisation (60) qui sélectionne et applique une tension de polarisation de substrat au substrat (W) selon le type de gaz.
(JA)
マイクロ波プラズマでの高効率・高速成膜と同時に、酸素混入を阻止し、欠陥数を低減させることのできる光電変換素子製造装置および方法、ならびに光電変換素子を提供するべく、本発明は、基板W上に半導体の積層膜をマイクロ波プラズマCVD法により成膜させる光電変換素子製造装置100において、薄膜を成膜させたい対象の基板Wが載置される基台を内蔵する密閉空間であるチャンバ10と、前記チャンバ10内のプラズマ励起領域にプラズマ励起ガスを供給する第1のガス供給部40と、前記チャンバ10内の圧力を調整する調圧部70と、前記チャンバ10内のプラズマ拡散領域に原料ガスを供給する第2のガス供給部50と、マイクロ波を前記チャンバ10内に導入するマイクロ波印加部20と、前記基板Wに対して基板バイアス電圧を前記ガス種に応じて選択して印加するバイアス電圧印加部60とを具備する。
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