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1. WO2009051087 - プラズマ成膜装置

公開番号 WO/2009/051087
公開日 23.04.2009
国際出願番号 PCT/JP2008/068525
国際出願日 14.10.2008
IPC
H01L 21/31 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
31半導体本体上への絶縁層の形成,例.マスキング用またはフォトリソグラフィック技術の使用によるもの;これらの層の後処理;これらの層のための材料の選択
C23C 16/458 2006.1
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
16ガス状化合物の分解による化学的被覆であって,表面材料の反応生成物を被覆層中に残さないもの,すなわち化学蒸着(CVD)法
44被覆の方法に特徴のあるもの
458反応室の基板を支えるのに使われる方法に特徴があるもの
H01L 21/683 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
67製造または処理中の半導体または電気的固体装置の取扱いに特に適用される装置;半導体または電気的固体装置もしくは構成部品の製造または処理中のウエハの取扱いに特に適用される装置
683支持または把持のためのもの
CPC
C23C 16/4585
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
4583the substrate being supported substantially horizontally
4585Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
C23C 16/50
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
H01L 21/0217
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
0217the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
H01L 21/02274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
02274in the presence of a plasma [PECVD]
H01L 21/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
出願人
  • 三菱重工業株式会社 MITSUBISHI HEAVY INDUSTRIES, LTD. [JP]/[JP] (AllExceptUS)
  • 加福 秀考 KAFUKU, Hidetaka [JP]/[JP] (UsOnly)
  • 嶋津 正 SHIMAZU, Tadashi [JP]/[JP] (UsOnly)
  • 松田 竜一 MATSUDA, Ryuichi [JP]/[JP] (UsOnly)
  • 松倉 明彦 MATSUKURA, Akihiko [JP]/[JP] (UsOnly)
  • 西川 誠二 NISHIKAWA, Seiji [JP]/[JP] (UsOnly)
発明者
  • 加福 秀考 KAFUKU, Hidetaka
  • 嶋津 正 SHIMAZU, Tadashi
  • 松田 竜一 MATSUDA, Ryuichi
  • 松倉 明彦 MATSUKURA, Akihiko
  • 西川 誠二 NISHIKAWA, Seiji
代理人
  • 光石俊郎 MITSUISHI, Toshiro
優先権情報
2007-27223319.10.2007JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) PLASMA FILM FORMING APPARATUS
(FR) APPAREIL DE FORMATION DE FILM DE PLASMA
(JA) プラズマ成膜装置
要約
(EN) Provided is a plasma film forming apparatus which can reduce particles even in the case of forming a film by applying bias power to a substrate. In the plasma film forming apparatus, bias power is applied to a wafer (5) placed on a supporting table (4) in a chamber and a thin film is formed on the wafer (5) by using plasma. The supporting table (4) is provided with a columnar supporting table main body (4b) whose outer diameter (C) of a contact surface (4a) with the wafer (5) is smaller than the outer diameter (W) of the wafer (5). The supporting table (4) is also provided with a flange section (4c) which extends in the outer circumference direction from a side surface (4d) of the supporting table main body (4b). A prescribed gap (G1) is formed between the flange (4c) and the rear surface of the outer circumference of the wafer (5).
(FR) La présente invention concerne un appareil de formation de film de plasma qui peut réduire des particules même dans le cas de la formation d'un film en appliquant une puissance de polarisation sur un substrat. Dans l'appareil de formation de film de plasma, une puissance de polarisation est appliquée sur une tranche (5) placée sur une table de support (4) dans une chambre et un film mince est formé sur la tranche (5) en utilisant le plasma. La table de support (4) est pourvue d'un corps principal de table de support en colonne (4b) dont le diamètre extérieur (C) d'une surface de contact (4a) avec la tranche (5) est inférieur au diamètre extérieur (W) de la tranche (5). La table de support (4) est également pourvue d'une section de bride (4c) qui s'étend dans la direction de circonférence extérieure à partir d'une surface latérale (4d) du corps principal de table de support (4b). Un espace prescrit (G1) est formé entre la bride (4c) et la surface arrière de la circonférence extérieure de la tranche (5).
(JA)  基板にバイアスを印加して成膜する場合においても、パーティクルを低減することができるプラズマ成膜装置を提供する。そのため、チャンバ内の支持台4上に載置したウェハ5にバイアスを印加すると共に、ウェハ5上にプラズマを用いて薄膜を形成するプラズマ成膜装置において、支持台4は、ウェハ5との接触面4aの外径Cがウェハ5の外径Wより小さい円柱状の支持台本体4bと、支持台本体4bの側面4dから外周方向に延設された鍔部4cとを備え、鍔4cとウェハ5の外周の裏面との間に所定の隙間G1を形成している。
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