処理中

しばらくお待ちください...

設定

設定

出願の表示

1. WO2007132757 - クリーニング方法及び真空処理装置

公開番号 WO/2007/132757
公開日 22.11.2007
国際出願番号 PCT/JP2007/059718
国際出願日 11.05.2007
IPC
H01L 21/304 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
302表面の物理的性質または形状を変換するため,例.エッチング,ポリシング,切断
304機械的処理,例.研摩,ポリシング,切断
CPC
C23C 16/4405
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
4405Cleaning of reactor or parts inside the reactor by using reactive gases
C23C 16/4586
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
4583the substrate being supported substantially horizontally
4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices
H01J 37/32862
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
32853Hygiene
32862In situ cleaning of vessels and/or internal parts
Y10T 279/23
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
279Chucks or sockets
23with magnetic or electrostatic means
出願人
  • 株式会社アルバック ULVAC, INC. [JP]/[JP] (AllExceptUS)
  • 曽我部 浩二 SOGABE, Kouji [JP]/[JP] (UsOnly)
  • 森本 直樹 MORIMOTO, Naoki [JP]/[JP] (UsOnly)
  • 石田 正彦 ISHIDA, Masahiko [JP]/[JP] (UsOnly)
発明者
  • 曽我部 浩二 SOGABE, Kouji
  • 森本 直樹 MORIMOTO, Naoki
  • 石田 正彦 ISHIDA, Masahiko
代理人
  • 阿部 英樹 ABE, Hideki
優先権情報
2006-13543615.05.2006JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) CLEANING METHOD AND VACUUM PROCESSING APPARATUS
(FR) PROCÉDÉ DE NETTOYAGE ET APPAREIL DE TRAITEMENT SOUS VIDE
(JA) クリーニング方法及び真空処理装置
要約
(EN)
A technology of maintaining a fixed attracting force of an attracting surface (3a) of a mechanism for electrostatically attracting a subject to be processed, by cleaning an attracting surface in a vacuum processing apparatus (1). The cleaning method is provided for cleaning the attracting surface (3a) of a hot plate (3) which holds the subject to be treated by electrostatic attraction in a vacuum processing chamber (2). The method is provided with a step of applying high frequency power of 13.56MHz to a metal seat (6) arranged below the hot plate (3) in the vicinity, in a state where a cleaning gas (G) is introduced into the vacuum processing chamber (2), and cleaning the attracting surface (3a) of the hot plate (3).
(FR)
La présente invention concerne une technologie permettant de maintenir une force d'attraction fixe d'une surface d'attraction (3a) d'un mécanisme d'attraction électrostatique d'un sujet à traiter, en nettoyant la surface d'attraction dans un appareil de traitement sous vide (1). Le procédé de nettoyage sert à nettoyer la surface d'attraction (3a) d'une plaque chaude (3) qui maintient le sujet à traiter par attraction électrostatique dans une chambre de traitement sous vide (2). Le procédé comporte une étape consistant à appliquer une énergie à haute fréquence de 13,56MHz à un siège métallique (6) disposé sous la plaque chaude (3) à proximité, à un état dans lequel un gaz de nettoyage (G) est introduit dans la chambre de traitement sous vide (2), et à nettoyer la surface d'attraction (3a) de la plaque chaude (3).
(JA)
not available
他の公開
US12269438
国際事務局に記録されている最新の書誌情報