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1. WO2007108445 - 連続薄膜の形成方法及び薄膜付き線状ガラス基板

公開番号 WO/2007/108445
公開日 27.09.2007
国際出願番号 PCT/JP2007/055538
国際出願日 19.03.2007
IPC
H01L 21/205 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
20基板上への半導体材料の析出,例.エピタキシャル成長
205固体を析出させるガス状化合物の還元または分解を用いるもの,すなわち化学的析出を用いるもの
CPC
C03C 17/002
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
001General methods for coating; Devices therefor
002for flat glass, e.g. float glass
C03C 17/09
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
06with metals
09by deposition from the vapour phase
C03C 2217/268
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
2217Coatings on glass
20Materials for coating a single layer on glass
25Metals
268Other specific metals
C03C 2218/152
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
2218Methods for coating glass
10Deposition methods
15from the vapour phase
152by cvd
C23C 16/24
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
24Deposition of silicon only
C23C 16/4583
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
4583the substrate being supported substantially horizontally
出願人
  • 古河電気工業株式会社 THE FURUKAWA ELECTRIC CO., LTD. [JP/JP]; 〒1008322 東京都千代田区丸の内2丁目2番3号 Tokyo 2-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008322, JP (AllExceptUS)
  • 中村 肇宏 NAKAMURA, Toshihiro [JP/JP]; JP (UsOnly)
  • 戸田 貞行 TODA, Sadayuki [JP/JP]; JP (UsOnly)
  • 小相澤 久 KOAIZAWA, Hisashi [JP/JP]; JP (UsOnly)
発明者
  • 中村 肇宏 NAKAMURA, Toshihiro; JP
  • 戸田 貞行 TODA, Sadayuki; JP
  • 小相澤 久 KOAIZAWA, Hisashi; JP
代理人
  • 松下 亮 MATSUSHITA, Makoto; 〒2220033 神奈川県横浜市港北区新横浜2-5-19 アプリ新横浜ビル5階 Kanagawa Apuri Shinyokohama Building 5F. 2-5-19, Shinyokohama Kohoku-ku, Yokohama-shi Kanagawa 2220033, JP
優先権情報
2006-07635120.03.2006JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) METHOD OF FORMING CONTINUOUS THIN FILM AND LINEAR GLASS SUBSTRATE WITH THIN FILM
(FR) procédé de formation de mince film continu et substrat de verre linéaire avec film mince
(JA) 連続薄膜の形成方法及び薄膜付き線状ガラス基板
要約
(EN)
A method of forming a continuous thin film, in which a thin band-form glass substrate (10a) having a coefficient db/2(d+b) ranging from 0.015 to 0.15, d being a depth and b being a width at a substrate section, is continuously moved so as to pass a cooling region (17) lower in temperature than a film forming region (16) immediately after passed the film forming region (16) controlled to a high temperature by supplying a reaction gas, and the glass substrate (10a) is heated quickly in the film forming region (16) and then is quickly cooled in the cooling region (17) to thereby form a thin film consisting of a reaction gas component on the glass substrate (10b), whereby a dense thin film such as a silicon thin film is formed at high speed and continuously on a thin band-form glass substrate (10a).
(FR)
L'invention concerne un procédé de formation de mince film continu, selon lequel un substrat de verre en forme de bande mince (10a) possédant un coefficient db/2(d+b) allant de 0,015 à 0,15, d étant une profondeur et b étant une largeur en une section du substrat, est déplacé de manière continue pour passer à travers une région de refroidissement (17) de température inférieure à celle d'une région de formation de film (16) juste après la région de formation de film (16) régulée à une température élevée en injectant un gaz de réaction, et le substrat de verre (10a) est chauffé rapidement dans la région de formation de film (16) puis est rapidement refroidi dans la région de refroidissement (17) pour ainsi constituer un mince film consistant en un composant de gaz de réaction sur le substrat de verre (10b), un mince film dense comme un mince film de silicium se formant à grande vitesse et de manière continue sur le substrat de verre en forme de bande mince (10a).
(JA)
本発明の連続薄膜形成方法では、基板断面での厚さdと幅bの係数db/2(d+b)が0.015から0.15の範囲の薄い帯状のガラス基板10aを、反応ガスが供給されており高温状態に温度制御された成膜領域16を通過直後に、該成膜領域16よりも低い温度の冷却領域17を通過するよう連続移動させて、前記ガラス基板10aを前記成膜領域16において急速加熱し、その後速やかに前記冷却領域17において急冷することにより、前記ガラス基板10b上に前記反応ガス成分からなる薄膜を形成させて、薄い帯状ガラス基板10a上に、例えばシリコン薄膜のような緻密な薄膜を高速で連続的に形成する。
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