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1. WO2007108401 - 半導体装置の製造方法および基板処理装置

公開番号 WO/2007/108401
公開日 27.09.2007
国際出願番号 PCT/JP2007/055289
国際出願日 15.03.2007
IPC
H01L 21/205 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
20基板上への半導体材料の析出,例.エピタキシャル成長
205固体を析出させるガス状化合物の還元または分解を用いるもの,すなわち化学的析出を用いるもの
C23C 16/455 2006.01
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
16ガス状化合物の分解による化学的被覆であって,表面材料の反応生成物を被覆層中に残さないもの,すなわち化学蒸着(CVD)法
44被覆の方法に特徴のあるもの
455ガスを反応室に導入するため,または反応室のガス流を変えるために使われる方法に特徴があるもの
H01L 21/31 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
31半導体本体上への絶縁層の形成,例.マスキング用またはフォトリソグラフィック技術の使用によるもの;これらの層の後処理;これらの層のための材料の選択
CPC
C23C 16/345
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
345Silicon nitride
C23C 16/4405
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
4405Cleaning of reactor or parts inside the reactor by using reactive gases
C23C 16/45574
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45563Gas nozzles
45574Nozzles for more than one gas
C23C 16/45578
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45563Gas nozzles
45578Elongated nozzles, tubes with holes
C23C 16/52
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
52Controlling or regulating the coating process
H01L 21/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
出願人
  • 株式会社日立国際電気 HITACHI KOKUSAI ELECTRIC INC. [JP/JP]; 〒1018980 東京都千代田区外神田四丁目14番1号 Tokyo 14-1, Sotokanda 4-chome, Chiyoda-ku, Tokyo 1018980, JP (AllExceptUS)
  • 前田 孝浩 MAEDA, Takahiro [JP/JP]; JP (UsOnly)
  • 前田 喜世彦 MAEDA, Kiyohiko [JP/JP]; JP (UsOnly)
  • 尾崎 貴志 OZAKI, Takashi [JP/JP]; JP (UsOnly)
  • 吉野 昭仁 YOSHINO, Akihito [JP/JP]; JP (UsOnly)
  • 越 保信 KOSHI, Yasunobu [JP/JP]; JP (UsOnly)
  • 浦野 裕司 URANO, Yuji [JP/JP]; JP (UsOnly)
発明者
  • 前田 孝浩 MAEDA, Takahiro; JP
  • 前田 喜世彦 MAEDA, Kiyohiko; JP
  • 尾崎 貴志 OZAKI, Takashi; JP
  • 吉野 昭仁 YOSHINO, Akihito; JP
  • 越 保信 KOSHI, Yasunobu; JP
  • 浦野 裕司 URANO, Yuji; JP
代理人
  • 油井 透 YUI, Tohru; 〒1020072 東京都千代田区飯田橋4丁目6番1号 21東和ビル3F Tokyo 21 TOWA BLDG. 3F, 4-6-1, Iidabashi, Chiyoda-ku, Tokyo 1020072, JP
優先権情報
2006-07657220.03.2006JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS
(FR) PROCEDE DE FABRICATION DE DISPOSITIF A SEMI-CONDUCTEURS ET APPAREIL DE TRAITEMENT DE SUBSTRAT
(JA) 半導体装置の製造方法および基板処理装置
要約
(EN)
High productivity is achieved, while maintaining excellent film forming characteristics on a substrate, even when a plurality of different types of process gases are used. A semiconductor device manufacturing method is provided with a process of carrying a plurality of substrates into a processing chamber; a step of supplying a first process gas into upstream of a gas flow in areas other than the area where the substrates carried into the processing chamber are arranged; a step of supplying a second process gas into upstream of the gas flow in the areas other than the area where the substrates carried into the processing chamber are arranged; a step of supplying the first process gas to a middle part of the gas flow in the area where the substrates carried into the processing chamber are arranged; a process of forming a thin film on the main surface of the substrates by having the first process gas react with the second process gas in the processing chamber and forming an amorphous body; and a process of carrying out the substrates with the thin films formed thereon from the processing chamber.
(FR)
La présente invention permet d'obtenir une forte productivité, tout en maintenant d'excellentes caractéristiques de formation de film sur un substrat, même lorsque l'on utilise une pluralité de types différents de gaz de traitement. Un procédé de fabrication de dispositif à semi-conducteurs dispose d'un procédé pour transporter une pluralité de substrats dans une chambre de traitement, une étape de fourniture d'un premier gaz de traitement dans le flux montant d'un flux de gaz dans des zones différentes de la zone où sont agencés les substrats transportés dans la chambre de traitement, une étape de fourniture d'un second gaz de traitement dans le flux montant du flux de gaz dans des zones autres que celle où sont placés les substrats transportés dans la chambre de traitement, une étape de fourniture du premier gaz de traitement à une partie médiane du flux de gaz dans la zone où sont placés les substrats transportés dans la chambre de traitement, un procédé de formation d'un film mince sur la surface principale des substrats en amenant le premier gaz de traitement à réagir avec le second dans la chambre de traitement et à former un corps amorphe et un procédé de réalisation des substrats avec les films minces formés dessus à partir de la chambre de traitement.
(JA)
 異なるガス種の処理ガスを複数用いても基板上に良質な成膜特性を維持したまま 高い生産性を実現する。  複数枚の基板を処理室内に搬入する工程と、第1の処理ガスの、処理室内に搬入された複数枚の基板が配置される領域外のガス流の上流側への供給と、第2の処理ガスの、処理室内に搬入された複数枚の基板が配置される領域外のガス流の上流側への供給と、第1の処理ガスの、処理室内に搬入された複数枚の基板が配置される領域内のガス流の途中箇所への供給と、処理室内で第1の処理ガスと第2の処理ガスとを反応させて非結晶体を形成し複数枚の基板の主面に薄膜を形成する工程と、薄膜を形成した後の基板を前記処理室より搬出する工程と、を有する。
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