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1. WO2007108315 - 基板処理装置及び基板処理方法

公開番号 WO/2007/108315
公開日 27.09.2007
国際出願番号 PCT/JP2007/054334
国際出願日 06.03.2007
IPC
H01L 21/304 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
302表面の物理的性質または形状を変換するため,例.エッチング,ポリシング,切断
304機械的処理,例.研摩,ポリシング,切断
CPC
B08B 2203/0288
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
2203Details of cleaning machines or methods involving the use or presence of liquid or steam
02Details of machines or methods for cleaning by the force of jets or sprays
0288Ultra or megasonic jets
B08B 3/02
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3Cleaning by methods involving the use or presence of liquid or steam
02Cleaning by the force of jets or sprays
B08B 3/12
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3Cleaning by methods involving the use or presence of liquid or steam
04Cleaning involving contact with liquid
10with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity, by vibration
12by sonic or ultrasonic vibrations
B24B 37/04
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
04designed for working plane surfaces
H01L 21/02052
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02043Cleaning before device manufacture, i.e. Begin-Of-Line process
02052Wet cleaning only
H01L 21/02074
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02057Cleaning during device manufacture
02068during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
02074the processing being a planarization of conductive layers
出願人
  • 株式会社荏原製作所 EBARA CORPORATION [JP/JP]; 〒1448510 東京都大田区羽田旭町11-1 Tokyo 11-1, Haneda Asahi-cho, Ohta-ku, Tokyo 1448510, JP (AllExceptUS)
  • 及川 文利 OIKAWA, Fumitoshi [JP/JP]; JP (UsOnly)
  • 梶田 真二 KAJITA, Shinji [JP/JP]; JP (UsOnly)
発明者
  • 及川 文利 OIKAWA, Fumitoshi; JP
  • 梶田 真二 KAJITA, Shinji; JP
代理人
  • 宮川 貞二 MIYAGAWA, Teiji; 〒1600005 東京都新宿区愛住町19番地 富士ビル6階 Tokyo 6th Floor, Fuji Bldg., 19 Aizumi-cho, Shinjuku-ku Tokyo 1600005, JP
優先権情報
2006-07882222.03.2006JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT ET PROCEDE DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置及び基板処理方法
要約
(EN)
Provided is a substrate processing apparatus, which has a polishing apparatus (30A) for polishing the surface of a substrate, and at least an ultrasonic cleaning apparatus (42), which cleans the surface of the substrate by ultrasonic waves propagated through a liquid, or a double-fluid jet cleaning apparatus (44), which cleans the surface of the substrate by double fluid jet by which air and a liquid are mixed and jetted. A substrate processing method is provided with a polishing step of polishing the surface of the substrate, and a solid object noncontact cleaning step of cleaning the surface of the substrate while jetting the fluid onto the surface of the substrate. The substrate with polished surface can be efficiently cleaned by such apparatus and the method.
(FR)
Appareil de traitement de substrat comprenant un appareil de polissage (30A) pour polir la surface d'un substrat et au moins un appareil de nettoyage par ultrasons (42) qui nettoie la surface du substrat grâce à des ondes ultrasonores qui se propagent à travers un liquide, ou un appareil de nettoyage par jet à deux fluides (44) qui nettoie la surface du substrat avec un jet à deux fluides dans lequel de l'air et un liquide sont mélangés et projetés sous forme de jet. Le procédé de traitement de substrat comprend une étape de polissage pour polir la surface du substrat et une étape de nettoyage sans contact d'objet solide pour nettoyer la surface du substrat en envoyant un jet de fluide sur la surface du substrat. Un tel appareil et un tel procédé permettent de nettoyer efficacement un substrat dont la surface est polie.
(JA)
not available
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