処理中

しばらくお待ちください...

設定

設定

1. WO2007105472 - 磁気抵抗効果素子の製造方法及び製造装置

公開番号 WO/2007/105472
公開日 20.09.2007
国際出願番号 PCT/JP2007/053487
国際出願日 26.02.2007
予備審査請求日 25.12.2007
IPC
H01L 43/12 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
43電流磁気効果またはこれに類似な磁気効果を利用した装置;それらの装置またはその部品の製造または処理に特に適用される方法または装置
12これらの装置またはそれらの部品の製造または処理に特に適用される方法または装置
H01L 43/08 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
43電流磁気効果またはこれに類似な磁気効果を利用した装置;それらの装置またはその部品の製造または処理に特に適用される方法または装置
08磁界制御抵抗
CPC
C23C 14/081
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
081of aluminium, magnesium or beryllium
C23C 14/16
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
14Metallic material, boron or silicon
16on metallic substrates or on substrates of boron or silicon
C23C 14/568
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
568Transferring the substrates through a series of coating stations
H01J 37/32458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32458Vessel
H01J 37/32633
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32623Mechanical discharge control means
32633Baffles
H01J 37/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
出願人
  • キヤノンアネルバ株式会社 CANON ANELVA CORPORATION [JP/JP]; 〒2158550 神奈川県川崎市麻生区栗木2丁目5番1号 Kanagawa 2-5-1, Kurigi Asao-ku, Kawasaki-shi Kanagawa 2158550, JP (AllExceptUS)
  • 永峰 佳紀 NAGAMINE, Yoshinori [JP/JP]; JP (UsOnly)
  • 恒川 孝ニ TSUNEKAWA, Koji [JP/JP]; JP (UsOnly)
  • ジャヤプラウィラ ダビッド ジュリアント DJAYAPRAWIRA, David, Djulianto [ID/JP]; JP (UsOnly)
  • 前原 大樹 MAEHARA, Hiroki [JP/JP]; JP (UsOnly)
発明者
  • 永峰 佳紀 NAGAMINE, Yoshinori; JP
  • 恒川 孝ニ TSUNEKAWA, Koji; JP
  • ジャヤプラウィラ ダビッド ジュリアント DJAYAPRAWIRA, David, Djulianto; JP
  • 前原 大樹 MAEHARA, Hiroki; JP
代理人
  • 羽切 正治 HAGIRI, Masaharu; 〒1020072 東京都千代田区飯田橋4丁目6番1号21東和ビル4階 Tokyo 4F 21-Towa Bldg. 6-1, Iidabashi 4-chome, Chiyoda-ku, Tokyo 1020072, JP
優先権情報
2006-05874803.03.2006JP
2007-03468615.02.2007JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) METHOD FOR MANUFACTURING MAGNETORESISTANCE ELEMENT AND APPARATUS FOR MANUFACTURING MAGNETORESISTANCE ELEMENT
(FR) PROCEDE ET APPAREIL DE FABRICATION D'ELEMENT A MAGNETORESISTANCE
(JA) 磁気抵抗効果素子の製造方法及び製造装置
要約
(EN)
This invention provides a method for manufacturing a magnetoresistance element having a high MR ratio despite low RA and an apparatus for manufacturing a magnetoresistance element. A magnetoresistance element comprising an MgO (magnesium oxide) layer between a first ferromagnetic layer and a second ferromagnetic layer is produced by forming the MgO layer within a film forming chamber in which a material having a high gettering effect against oxidizing gases such as oxygen and water is applied onto the surface of constituent members, provided within the MgO layer forming chamber, for example, a film forming chamber inner wall (37) within a first film forming chamber (21), an inner wall in a deposition-preventive shield (36), a partition plate (22), and a shutter. The material having a high gettering effect may be a material having an oxygen gas adsorption energy value of not less than 145 kcal/mol. Ta (tantalum) as a material for constituting the magnetoresistance element is particularly preferred.
(FR)
La présente invention concerne un procédé de fabrication d'un élément à magnétorésistance ayant un rapport MR élevé en dépit d'un faible RA et un appareil de fabrication d'un élément à magnétorésistance. Un élément à magnétorésistance comprenant une couche de MgO (oxyde de magnésium) entre une première couche ferromagnétique et une seconde couche ferromagnétique est produit en formant la couche de MgO dans une chambre formant un film dans laquelle un matériau ayant une bonne adsorption par effet getter en ce qui concerne des gaz oxydants tels que l'oxygène et l'eau est appliqué sur la surface des éléments constitutifs, équipée à l'intérieur de la chambre formant une couche de MgO, par exemple, d'une paroi interne d'une chambre formant un film (37) à l'intérieur d'une première chambre formant un film (21), d'une paroi interne dans un écran anti-dépôt (36), d'une plaque de séparation (22) et d'un obturateur. Le matériau ayant une bonne adsorption par effet getter peut être un matériau ayant une valeur énergétique d'adsorption de gaz d'oxygène non inférieure à 145 kcal/mol. On préfère particulièrement Ta (le tantale) en tant que matériau pour constituer l'élément à magnétorésistance.
(JA)
 低RAでも高MR比を有する磁気抵抗効果素子の製造方法及び製造装置を提供する。 酸素や水などの酸化性ガスに対しゲッタ効果の大きい物質が前記MgO層を成膜する室内に設けられた構成部材(第1成膜室21内部の、成膜室内壁37、防着シールド36の内壁、仕切板22やシャッタなど)の表面に被着された成膜室内で前記MgO層を成膜するとによって、第1の強磁性層と第2の強磁性層との間にMgO(酸化マグネシウム)層を有する磁気抵抗効果素子を製造する。ゲッタ効果の大きい物質は、該物質の酸素ガス吸着エネルギーの値が145kcal/mol以上の物質であればよく、特に前記磁気抵抗効果素子を構成する物質としてのTa(タンタル)が好適である。
国際事務局に記録されている最新の書誌情報