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1. WO2007105361 - 電子部品モジュール

公開番号 WO/2007/105361
公開日 20.09.2007
国際出願番号 PCT/JP2007/000169
国際出願日 05.03.2007
IPC
H01L 21/52 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
50サブグループH01L21/06~H01L21/326の一つに分類されない方法または装置を用いる半導体装置の組立
52容器中への半導体本体のマウント
H01B 1/02 2006.01
H電気
01基本的電気素子
Bケーブル;導体;絶縁体;導電性,絶縁性または誘導性特性に対する材料の選択
1導電材料によって特徴づけられる導体または導電物体;導体としての材料の選択
02主として金属または合金からなるもの
H01L 25/07 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
03すべての装置がグループH01L27/00~H01L51/00の同じサブグループに分類される型からなるもの,例.整流ダイオードの組立体
04個別の容器を持たない装置
07装置がグループH01L29/00に分類された型からなるもの
H01L 25/18 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
18装置がグループH01L27/00~H01L51/00の同じメイングループの2つ以上の異なるサブグループに分類される型からなるもの
H01L 35/30 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
35異種材料の接合からなる熱電装置,すなわち他の熱電効果あるいは熱磁気効果を伴いまたは伴わないゼーベックまたはペルチェ効果を示すもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの装置の細部
28ペルチェ効果またはゼーベック効果だけで動作するもの
30接合部における熱交換手段に特徴のあるもの
H05K 3/34 2006.01
H電気
05他に分類されない電気技術
K印刷回路;電気装置の箱体または構造的細部,電気部品の組立体の製造
3印刷回路を製造するための装置または方法
30電気部品,例.抵抗器,を印刷回路に取り付けること
32印刷回路に対する電気部品または電線の電気的接続
34ハンダ付けによるもの
CPC
H01L 2224/29
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
H01L 2224/29101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29101the principal constituent melting at a temperature of less than 400°C
H01L 2224/29124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29117the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
29124Aluminium [Al] as principal constituent
H01L 2224/29139
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
29139Silver [Ag] as principal constituent
H01L 2224/29298
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
29198with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
29298Fillers
H01L 2224/32225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
出願人
  • 株式会社 東芝 KABUSHIKI KAISHA TOSHIBA [JP/JP]; 〒1058001 東京都港区芝浦一丁目1番1号 Tokyo 1-1, Shibaura 1-chome Minato-ku, Tokyo 1058001, JP (AllExceptUS)
  • 東芝マテリアル株式会社 TOSHIBA MATERIALS CO., LTD. [JP/JP]; 〒2358522 神奈川県横浜市磯子区新杉田町8番地 Kanagawa 8, Shinsugita-cho, Isogo-ku Yokohama-shi, Kanagawa 2358522, JP (AllExceptUS)
  • 加藤寛正 KATO, Hiromasa [JP/JP]; JP (UsOnly)
  • 那波隆之 NABA, Takayuki [JP/JP]; JP (UsOnly)
  • 中山憲隆 NAKAYAMA, Noritaka [JP/JP]; JP (UsOnly)
発明者
  • 加藤寛正 KATO, Hiromasa; JP
  • 那波隆之 NABA, Takayuki; JP
  • 中山憲隆 NAKAYAMA, Noritaka; JP
代理人
  • 須山佐一 SUYAMA, Saichi; 〒1010046 東京都千代田区神田多町2丁目1番地 神田東山ビル Tokyo Kanda Higashiyama Bldg. 1, Kandata-cho 2-chome Chiyoda-ku, Tokyo 1010046, JP
優先権情報
2006-06270608.03.2006JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) ELECTRONIC COMPONENT MODULE
(FR) MODULE DE COMPOSANT ELECTRONIQUE
(JA) 電子部品モジュール
要約
(EN)
An electronic component module (1) is provided with a circuit board (2) wherein metal plates (5, 7) are bonded on the both surfaces of a ceramic substrate (3), and an electronic component (9), which is bonded on at least one metal plate (5) of the circuit board (2) and is operable at least at 125°C. The electronic component (9) is bonded to the metal plate (5) through a solder material layer (8) composed of a soldering material having a melting point which is higher than the use temperature of the electronic component (9).
(FR)
L'invention concerne un module de composant électronique (1) muni d'une carte à circuit imprimé (2), des plaques métalliques (5, 7) étant soudées sur les deux surfaces d'un substrat céramique (3), ainsi qu'un composant électronique (9) qui est soudé sur au moins une plaque métallique (5) de la carte à circuit imprimé (2) et qui peut fonctionner au moins à 125 °C. Le composant électronique (9) est soudé sur la plaque métallique (5) par l'intermédiaire d'une couche de matériau de soudure (8) composée d'un matériau de soudure présentant un point de fusion qui est supérieur à la température d'utilisation du composant électronique (9).
(JA)
 電子部品モジュール1は、セラミックス基板3の両面に金属板5、7が接合された回路基板2と、回路基板2の少なくとも一方の金属板5に接合され、少なくとも125°Cで動作可能な電子部品9とを具備する。電子部品9は、電子部品9の使用温度より高い融点を有するろう材からなるろう材層8を介して、金属板5に接合されている。
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