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1. WO2007105328 - 面発光レーザ素子アレイ

公開番号 WO/2007/105328
公開日 20.09.2007
国際出願番号 PCT/JP2006/317368
国際出願日 01.09.2006
IPC
H01S 5/183 2006.01
H電気
01基本的電気素子
S光を増幅または生成するために,放射の誘導放出による光増幅を用いた装置;光領域以外の電磁放射の誘導放出を用いた装置
5半導体レーザ
10光共振器の構造または形状
18表面放出型レーザ[7]
183垂直共振器を有するもの[7]
CPC
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/49175
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
49of a plurality of wire connectors
491Disposition
4912Layout
49175Parallel arrangements
H01S 2301/176
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2301Functional characteristics
17Semiconductor lasers comprising special layers
176Specific passivation layers on surfaces other than the emission facet
H01S 2301/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2301Functional characteristics
18Semiconductor lasers with special structural design for influencing the near- or far-field
H01S 5/02276
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02236Mounts or sub-mounts
02276Wire-bonding details
H01S 5/0422
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
042Electrical excitation ; ; Circuits therefor
0421characterised by the semiconducting contacting layers
0422with n- and p-contacts on the same side of the active layer
出願人
  • 古河電気工業株式会社 THE FURUKAWA ELECTRIC CO., LTD. [JP/JP]; 〒1008322 東京都千代田区丸の内二丁目2番3号 Tokyo 2-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008322, JP (AE, AG, AL, AM, AT, AU, AZ, BA, BB, BE, BF, BG, BJ, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GW, HN, HR, HU, ID, IE, IL, IN, IS, IT, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, MG, MK, ML, MN, MR, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SI, SK, SL, SM, SN, SV, SY, SZ, TD, TG, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW)
  • 有賀 麻衣子 ARIGA, Maiko [JP/JP]; JP (UsOnly)
  • 影山 健生 KAGEYAMA, Takeo [JP/JP]; JP (UsOnly)
  • 岩井 則広 IWAI, Norihiro [JP/JP]; JP (UsOnly)
  • 西片 一昭 NISHIKATA, Kazuaki [JP/JP]; JP (UsOnly)
発明者
  • 有賀 麻衣子 ARIGA, Maiko; JP
  • 影山 健生 KAGEYAMA, Takeo; JP
  • 岩井 則広 IWAI, Norihiro; JP
  • 西片 一昭 NISHIKATA, Kazuaki; JP
代理人
  • 酒井 宏明 SAKAI, Hiroaki; 〒1006019 東京都千代田区霞が関三丁目2番5号 霞が関ビルディング 酒井国際特許事務所 Tokyo Sakai International Patent Office Kasumigaseki Building 2-5, Kasumigaseki 3-chome Chiyoda-ku, Tokyo 1006020, JP
優先権情報
2006-06856714.03.2006JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SURFACE EMITTING LASER ELEMENT ARRAY
(FR) MATRICE D'ELEMENTS LASER EMETTANT EN SURFACE
(JA) 面発光レーザ素子アレイ
要約
(EN)
A surface emitting laser element array is provided with a plurality of surface emitting laser elements (15), which have a mesa post formed of a laminated structure including an active layer (4), on a same substrate (1) to reduce crosstalk between the surface emitting laser elements constituting the surface emitting laser element array and to improve high speed response. Each of the surface emitting laser elements (15) is provided with a first electrode (9), and a second electrode (10) and a third electrode (11) having a polarity different from that of the first electrode (9). The first electrode (9) is arranged on the mesa post, the second electrode (10) is arranged on the same side of the substrate (1) as the first electrode (9), and the third electrode (11) is arranged on the substrate (1) on the surface opposite to the surface whereupon the first and the second electrodes (9, 10) are arranged, as a common electrode to the surface emitting laser elements (15). A current is applied to the active layer (4) by the first electrode (9) and the second electrode (10).
(FR)
La présente invention concerne une matrice d'éléments laser émettant en surface munie d'une pluralité d'éléments laser émettant en surface (15), qui comportent une structure mesa formée d'une structure stratifiée incluant une couche active (4), sur un même substrat (1), afin de réduire la diaphonie entre les éléments laser émettant en surface constituant la matrice d'éléments laser émettant en surface et afin d'améliorer la réponse rapide. Chacun des éléments laser émettant en surface (15) est muni d'une première électrode (9), ainsi que d'une deuxième électrode (10) et d'une troisième électrode (11) ayant une polarité différente de celle de la première électrode (9). La première électrode (9) est disposée sur la structure mesa, la deuxième électrode (10) est disposée sur le même côté du substrat (1) que la première électrode (9), et la troisième électrode (11) est disposée sur le substrat (1) sur la surface opposée à la surface sur laquelle sont disposées la première et la deuxième électrode (9, 10), en tant qu'électrode commune aux éléments laser émettant en surface (15). Un courant est appliqué à la couche active (4) par la première électrode (9) et la deuxième électrode (10).
(JA)
 面発光レーザ素子アレイを構成する面発光レーザ素子間のクロストークを低減させ、かつ、高速応答性を向上させるため、活性層4を含む積層構造が形成するメサポストを有する面発光レーザ素子15を複数、同一基板1上に備えた面発光レーザ素子アレイにおいて、前記面発光レーザ素子15はそれぞれ、第1の電極9と、第1の電極9に対して極性の異なる第2の電極10および第3の電極11とを有し、前記第1の電極9は前記メサポスト上に配置され、前記第2の電極10は前記基板1に対して第1の電極9と同一面側に配置され、前記第3の電極11は前記第1および第2の電極9,10とは基板1の反対側の面に配置されて複数の面発光レーザ素子15に対して共通の電極として設けられており、前記第1の電極9と前記第2の電極10により前記活性層4に電流を注入する。
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