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1. WO2007102600 - 面発光半導体レーザ素子

公開番号 WO/2007/102600
公開日 13.09.2007
国際出願番号 PCT/JP2007/054653
国際出願日 09.03.2007
IPC
H01S 5/183 2006.01
H電気
01基本的電気素子
S光を増幅または生成するために,放射の誘導放出による光増幅を用いた装置;光領域以外の電磁放射の誘導放出を用いた装置
5半導体レーザ
10光共振器の構造または形状
18表面放出型レーザ[7]
183垂直共振器を有するもの[7]
CPC
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
H01S 2301/166
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2301Functional characteristics
16Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
166Single transverse or lateral mode
H01S 2302/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2302Amplification / lasing wavelength
H01S 5/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
105Comprising a photonic bandgap structure
H01S 5/18305
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18305with emission through the substrate, i.e. bottom emission
H01S 5/18319
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18308having a special structure for lateral current or light confinement
18319comprising a periodical structure in lateral directions
出願人
  • 古河電気工業株式会社 THE FURUKAWA ELECTRIC CO., LTD. [JP/JP]; 〒1008322 東京都千代田区丸の内2丁目2番3号 Tokyo 2-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008322, JP (AllExceptUS)
  • 喜瀬 智文 KISE, Tomofumi [JP/JP]; JP (UsOnly)
  • 横内 則之 YOKOUCHI, Noriyuki [JP/JP]; JP (UsOnly)
発明者
  • 喜瀬 智文 KISE, Tomofumi; JP
  • 横内 則之 YOKOUCHI, Noriyuki; JP
代理人
  • 稲垣 清 INAGAKI, Kiyoshi; 〒1010042 東京都千代田区神田東松下町37 林道ビル5階 扶桑特許事務所内 Tokyo c/o FUSOH PATENT FIRM, Rindo Building 5F 37, Kanda-Higashimatsushita-cho Chiyoda-ku, Tokyo 1010042, JP
優先権情報
2006-06424709.03.2006JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SURFACE EMITTING SEMICONDUCTOR LASER ELEMENT
(FR) ELEMENT LASER A SEMI-CONDUCTEUR A EMISSION DE SURFACE
(JA) 面発光半導体レーザ素子
要約
(EN)
A surface emitting laser (100) is provided with an upper reflecting mirror (16) having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror (12). An upper electrode (20) is formed on the point defect at the center, and element resistance is reduced. A material transparent to the laser beam having an oscillation wavelength is used for a substrate (10). Emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser.
(FR)
L'invention concerne un laser à émission de surface (100) avec un miroir réfléchissant supérieur (16) ayant une structure de cristal photonique comportant un défaut ponctuel en son centre et qui émet un faisceau laser à partir du côté où se trouve un miroir réfléchissant inférieur (12). On forme une électrode supérieure (20) sur le défaut ponctuel au centre et la résistance de l'élément est réduite. On utilise comme substrat (10) un matériau transparent au faisceau laser présentant une longueur d'onde d'oscillation. Le rendement d'émission est amélioré par la réduction de la résistance de l'élément du laser à émission de surface à cristal photonique.
(JA)
 面発光レーザ(100)は、中央部に点欠陥を持つフォトニック結晶構造を有する上部反射鏡を(16)有し、下部反射鏡(12)側からレーザを出射させる。上部電極(20)を中央部の点欠陥上に形成し、素子抵抗を低減する。基板(10)は、発振波長のレーザ光に透明な材料を用いる。フォトニック結晶面発光レーザの素子抵抗を低くして発光効率を向上する。
他の公開
US12219997
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