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1. WO2007102333 - ルテニウム膜の成膜方法およびコンピュータ読取可能な記憶媒体

公開番号 WO/2007/102333
公開日 13.09.2007
国際出願番号 PCT/JP2007/053577
国際出願日 27.02.2007
IPC
C23C 16/18 2006.01
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
16ガス状化合物の分解による化学的被覆であって,表面材料の反応生成物を被覆層中に残さないもの,すなわち化学蒸着(CVD)法
06金属質材料の析出に特徴のあるもの
18金属有機質化合物からのもの
H01L 21/285 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
28H01L21/20~H01L21/268に分類されない方法または装置を用いる半導体本体上への電極の製造
283電極用の導電または絶縁材料の析出
285気体または蒸気からの析出,例.凝結
CPC
C23C 16/045
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
04Coating on selected surface areas, e.g. using masks
045Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
C23C 16/06
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
06characterised by the deposition of metallic material
C23C 16/18
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
06characterised by the deposition of metallic material
18from metallo-organic compounds
C23C 16/4405
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
4405Cleaning of reactor or parts inside the reactor by using reactive gases
C23C 16/45525
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
H01L 21/28556
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28512on semiconductor bodies comprising elements of Group IV of the Periodic System
28556by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
出願人
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 〒1078481 東京都港区赤坂五丁目3番6号 Tokyo 3-6, Akasaka 5-chome, Minato-ku, Tokyo 1078481, JP (AllExceptUS)
  • 河野 有美子 KAWANO, Yumiko [JP/JP]; JP (UsOnly)
  • 山▲崎▼ 英亮 YAMASAKI, Hideaki [JP/JP]; JP (UsOnly)
  • 有馬 進 ARIMA, Susumu [JP/JP]; JP (UsOnly)
発明者
  • 河野 有美子 KAWANO, Yumiko; JP
  • 山▲崎▼ 英亮 YAMASAKI, Hideaki; JP
  • 有馬 進 ARIMA, Susumu; JP
代理人
  • 高山 宏志 TAKAYAMA, Hiroshi; 〒1020093 東京都千代田区平河町一丁目7番20号 平河町辻田ビル2階 Tokyo Hirakawacho Tsujita Bldg. 2F 1-7-20 Hirakawacho, Chiyoda-ku Tokyo 1020093, JP
優先権情報
2006-05335928.02.2006JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) METHODS OF DEPOSITING RUTHENIUM FILM AND MEMORY MEDIUM READABLE BY COMPUTER
(FR) PROCEDE DE DEPOT D'UN FILM DE RUTHENIUM ET SUPPORT DE MEMOIRE POUVANT ETRE LU PAR UN ORDINATEUR
(JA) ルテニウム膜の成膜方法およびコンピュータ読取可能な記憶媒体
要約
(EN)
A substrate is placed in a processing vessel and heated. Into the processing vessel are introduced a ruthenium pentadienyl compound gas, e.g., 2,4-dimethylpentadienylethylcyclo-pentadienylruthenium, and oxygen gas. These gases are reacted on the heated substrate to deposit a ruthenium film on the substrate. Alternatively, a substrate is placed in a processing vessel and heated. A ruthenium compound gas and a decompositing gas capable of decomposing this compound are introduced so that the flow rate of at least either of these changes periodically to form alternating steps which differ in gas composition. These gases are reacted on the heatedsubstrate without purging the processing vessel between those steps to thereby deposit a ruthenium film on the substrate.
(FR)
Selon la présente invention, un substrat est placé dans un récipient de traitement et chauffé. Dans le récipient de traitement, on introduit un composé gazeux pentadiénylruthénium, par exemple, le 2,4-diméthylpentadiényléthylcyclo-pentadiénylruthenium, et du gaz d'oxygène. Ces gaz sont mis à réagir sur le substrat chauffé de façon à déposer un film de ruthénium sur le substrat. En variante, un substrat est placé dans un récipient de traitement et chauffé. Un composé gazeux à base de ruthénium et un gaz de décomposition capable de décomposer ce composé sont introduits de façon à ce que le débit d'au moins l'un de ces derniers change périodiquement de façon à former des étapes alternatives qui diffèrent au niveau de la composition gazeuse. Ces gaz sont mis à réagir sur le substrat chauffé sans purger le récipient de traitement entre ces étapes de façon à déposer de ce fait un film de ruthénium sur le substrat.
(JA)
not available
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