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1. WO2007100125 - 半導体装置、その製造方法およびその製造方法に用いるスパッタリング用ターゲット材

公開番号 WO/2007/100125
公開日 07.09.2007
国際出願番号 PCT/JP2007/054134
国際出願日 27.02.2007
IPC
C22C 9/05 2006.01
C化学;冶金
22冶金;鉄または非鉄合金;合金の処理または非鉄金属の処理
C合金
9銅基合金
05次に多い成分としてマンガンを含むもの
C22C 9/00 2006.01
C化学;冶金
22冶金;鉄または非鉄合金;合金の処理または非鉄金属の処理
C合金
9銅基合金
C22C 9/02 2006.01
C化学;冶金
22冶金;鉄または非鉄合金;合金の処理または非鉄金属の処理
C合金
9銅基合金
02次に多い成分として錫を含むもの
C22C 9/04 2006.01
C化学;冶金
22冶金;鉄または非鉄合金;合金の処理または非鉄金属の処理
C合金
9銅基合金
04次に多い成分として亜鉛を含むもの
C23C 14/34 2006.01
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
22被覆の方法に特徴のあるもの
34スパッタリング
H01L 21/285 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
28H01L21/20~H01L21/268に分類されない方法または装置を用いる半導体本体上への電極の製造
283電極用の導電または絶縁材料の析出
285気体または蒸気からの析出,例.凝結
CPC
C23C 14/027
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
02Pretreatment of the material to be coated
027Graded interfaces
C23C 14/046
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
04Coating on selected surface areas, e.g. using masks
046Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
C23C 14/08
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
C23C 14/3414
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3407Cathode assembly for sputtering apparatus, e.g. Target
3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
C23C 14/5806
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
58After-treatment
5806Thermal treatment
H01L 21/2855
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28512on semiconductor bodies comprising elements of Group IV of the Periodic System
2855by physical means, e.g. sputtering, evaporation
出願人
  • 合同会社先端配線材料研究所 ADVANCED INTERCONNECT MATERIALS, LLC [JP/JP]; 〒9811222 宮城県名取市上余田字千刈田509-1 Miyagi 6-6-40-402, Aza-aoba, Aramaki Aoba-ku, Sendai-shi Miyagi 980-0845, JP (AllExceptUS)
  • 小池 淳一 KOIKE, Junichi [JP/JP]; JP (UsOnly)
発明者
  • 小池 淳一 KOIKE, Junichi; JP
代理人
  • 福田 賢三 FUKUDA, Kenzo; 〒1050003 東京都港区西新橋一丁目6番13号 柏屋ビル Tokyo Kashiwaya Bldg., 6-13 Nishishinbashi 1-chome Minato-ku, Tokyo 1050003, JP
優先権情報
2006-05243628.02.2006JP
2006-05385128.02.2006JP
2006-15622805.06.2006JP
2006-23732501.09.2006JP
2006-27846112.10.2006JP
2006-31695824.11.2006JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND SPUTTERING TARGET MATERIAL FOR USE IN THE METHOD
(FR) DISPOSITIF SEMICONDUCTEUR, SON PROCEDE DE FABRICATION ET MATERIAU CIBLE DE PULVERISATION A UTILISER DANS LEDIT PROCEDE
(JA) 半導体装置、その製造方法およびその製造方法に用いるスパッタリング用ターゲット材
要約
(EN)
Provided is a semiconductor device, which can provide a barrier layer with barrier actions against the diffusion of Cu from the side of a wiring body and against the diffusion of Si from the side of an insulating film and which can improve the adhesion between the barrier layer and the insulating layer thereby to have an excellent action reliability over a long time period. The semiconductor device (1) comprises the insulating film (3) wired and containing silicon (Si), the wiring body (8) formed in a trench-shaped opening (4) in the insulating film (3) and made of copper (Cu), the barrier layer (7) formed between the wiring body (8) and the insulating film (3) and made of an oxide containing Cu, Si and Mn such that the atomic concentration of Cu monotonously decreases from the side of the wiring body (8) to the side of the insulating film (3), such that the atomic concentration of Si monotonously decreases from the side of the insulating film (3) to the side of the wiring body (8), and such that the atomic concentration of Mn reaches the maximum in the zone where the atomic concentration of Cu and the atomic concentration of Si are substantially equivalent to each other.
(FR)
La présente invention concerne un dispositif semiconducteur pouvant fournir une couche barrière à actions de blocage contre la diffusion de Cu depuis le côté d'un corps de câblage et contre la diffusion de Si depuis le côté d'un film isolant, permettant ainsi d'améliorer l'adhérence entre la couche barrière et la couche isolante et présentant une excellente fiabilité d'action sur une longue période. Le dispositif semiconducteur (1) comprend le film isolant (3) câblé et contenant du silicium (Si), le corps de câblage (8) formé dans une ouverture en forme de tranchée (4) dans le film isolant (3) et fabriqué en cuivre (Cu), la couche barrière (7) formée entre le corps de câblage (8) et le film isolant (3) et fait d'un oxyde comprenant Cu, Si et Mn de telle sorte que la concentration atomique de Cu diminue uniformément depuis le côté du corps de câblage (8) vers le côté du film isolant (3), que la concentration atomique de Si diminue uniformément depuis le côté du film isolant (3) vers le côté du corps de câblage (8) et que la concentration atomique de Mn atteint un maximum dans la zone où la concentration atomique de Cu est essentiellement équivalente à la concentration atomique de Si.
(JA)
配線本体側からのCuの拡散や、絶縁膜側からのSiの拡散に対する障壁作用をバリア層に十分にもたせることができ、またバリア層と絶縁膜との密着性を向上させることができ、長期的に直り動作の信頼性に優れた半導体装置を提供できるようにする。この発明は、絶縁膜3に配線が施されている半導体装置1において、珪素(Si)を含む絶縁膜3と、絶縁膜3に設けられた溝状の開口部4内に形成された、銅(Cu)からなる配線本体8と、配線本体8と絶縁膜3との間に形成され、配線本体8側から絶縁膜3側に向けてCuの原子濃度が単調に減少し、絶縁膜3側から配線本体8側に向けてSiの原子濃度が単調に減少し、Cuの原子濃度とSiの原子濃度とが略同等となる領域でMnの原子濃度が最大になる、CuとSiとMnとを含む酸化物からなるバリア層7と、を有するものである。
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