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1. WO2007099955 - 太陽電池セル、及び、この太陽電池セルを用いた太陽電池モジュール

公開番号 WO/2007/099955
公開日 07.09.2007
国際出願番号 PCT/JP2007/053642
国際出願日 27.02.2007
IPC
H01L 31/04 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
04光起電変換装置として使用されるもの
CPC
H01L 31/02245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
022441Electrode arrangements specially adapted for back-contact solar cells
02245for metallisation wrap-through [MWT] type solar cells
H01L 31/022458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
022441Electrode arrangements specially adapted for back-contact solar cells
022458for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
H01L 31/0516
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
0504specially adapted for series or parallel connection of solar cells in a module
0516specially adapted for interconnection of back-contact solar cells
H01L 31/0682
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
0682back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
H01L 31/0747
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0745comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
0747comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
54Material technologies
547Monocrystalline silicon PV cells
出願人
  • 三洋電機株式会社 SANYO ELECTRIC CO., LTD. [JP/JP]; 〒5708677 大阪府守口市京阪本通2丁目5番5号 Osaka 5-5, Keihan-Hondori 2-chome, Moriguchi-shi, Osaka 5708677, JP (AllExceptUS)
  • 菱田 有二 HISHIDA, Yuji; null (UsOnly)
  • 平 茂治 TAIRA, Shigeharu; null (UsOnly)
発明者
  • 菱田 有二 HISHIDA, Yuji; null
  • 平 茂治 TAIRA, Shigeharu; null
代理人
  • 寺山 啓進 TERAYAMA, Keishin; 〒1050001 東京都港区虎ノ門1丁目2番8号 虎ノ門琴平タワー 三好内外国特許事務所内 Tokyo c/o Miyoshi International Patent Office ToranomonKotohira Tower 2-8, Toranomon 1-chome Minato-ku, Tokyo 1050001, JP
優先権情報
2006-05553201.03.2006JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLAR BATTERY CELL AND SOLAR BATTERY MODULE USING SUCH SOLAR BATTERY CELL
(FR) PILE DE BATTERIES SOLAIRES ET MODULE DE BATTERIE SOLAIRE L'UTILISANT
(JA) 太陽電池セル、及び、この太陽電池セルを用いた太陽電池モジュール
要約
(EN)
Linear n fingers and p fingers are alternately arranged on a projection plane parallel to the main plane of a substrate, and solar battery cells are arranged in a prescribed arrangement direction. The solar battery cells are provided with n bus bar electrodes, which are connected to the n fingers and are insulated from the p fingers, and p bus bar electrodes, which are connected to the p fingers and insulated from the n fingers. The n bus bar electrodes and the p bus bar electrodes are arranged on the same main plane of the substrate, intersect with the n fingers and the p fingers on the projection plane, and are inclined from the prescribed arrangement direction.
(FR)
Selon la présente invention, des doigts n et des doigts p linéaires sont disposés de manière alternée sur un plan de projection parallèle au plan principal d'un substrat, et des piles de batteries solaires sont disposées dans un sens de disposition prescrit. Lesdites piles sont équipées d'électrodes barre omnibus n qui sont connectées aux doigts n et sont isolées des doigts p, et d'électrodes barre omnibus p qui sont connectées aux doigts p et isolées des doigts n. Lesdites électrodes sont disposées sur le même plan principal du substrat, croisent les doigts n et les doigts p sur le plan de projection et sont inclinées à partir du sens de disposition prescrit.
(JA)
 基板の主面と平行な投影面上でライン状のnフィンガー及びpフィンガーが交互に配列されており、所定の配列方向に従って配列される太陽電池セルであって、前記nフィンガーに接続されており、前記pフィンガーと絶縁されたnバスバー電極と、前記pフィンガーに接続されており、前記nフィンガーと絶縁されたpバスバー電極とを太陽電池セルが備える。前記nバスバー電極及び前記pバスバー電極は、前記基板の同一主面側に設けられ、前記投影面上で前記nフィンガー及び前記pフィンガーと交差しており、前記所定の配列方向に対して傾きを有している。
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