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1. WO2007099759 - 部品接合方法、部品積層方法および部品接合構造体

公開番号 WO/2007/099759
公開日 07.09.2007
国際出願番号 PCT/JP2007/052409
国際出願日 09.02.2007
IPC
H01L 21/52 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
50サブグループH01L21/06~H01L21/326の一つに分類されない方法または装置を用いる半導体装置の組立
52容器中への半導体本体のマウント
CPC
H01L 2224/29007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29005Structure
29007Layer connector smaller than the underlying bonding area
H01L 2224/2919
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
2919with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
H01L 2224/29298
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
29198with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
29298Fillers
H01L 2224/32145
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32135the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
32145the bodies being stacked
H01L 2224/32225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/32245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32245the item being metallic
出願人
  • 松下電器産業株式会社 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP/JP]; 〒5718501 大阪府門真市大字門真1006番地 Osaka 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
  • 土師 宏 HAJI, Hiroshi; null (UsOnly)
  • 大園 満 OZONO, Mitsuru; null (UsOnly)
  • 笠井 輝明 KASAI, Teruaki; null (UsOnly)
  • 野々村 勝 NONOMURA, Masaru; null (UsOnly)
発明者
  • 土師 宏 HAJI, Hiroshi; null
  • 大園 満 OZONO, Mitsuru; null
  • 笠井 輝明 KASAI, Teruaki; null
  • 野々村 勝 NONOMURA, Masaru; null
代理人
  • 市川 利光 ICHIKAWA, Toshimitsu; 〒1050003 東京都港区西新橋一丁目7番13号 栄光特許事務所 Tokyo Eikoh Patent Office 7-13, Nishi-Shimbashi 1-chome Minato-ku, Tokyo 1050003, JP
優先権情報
2006-05172928.02.2006JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) METHOD OF BONDING PART, METHOD OF STACKING PART, AND STRUCTURE INCLUDING PART BONDED
(FR) PROCEDE D'ADHERENCE ET D'EMPILAGE DE PIECE ET STRUCTURE COMPRENANT LA PIECE COLLEE
(JA) 部品接合方法、部品積層方法および部品接合構造体
要約
(EN)
A method of bonding a part and a method of stacking a part which are capable of realizing improved productivity in the step of thermal press-bonding. A semiconductor part (13) having a thermosetting adhesive layer (13c) formed on the lower side thereof is bonded to a substrate (5) having a resin layer on a surface thereof in the following manner. The resin surface (5a) of the substrate (5) is modified beforehand by a plasma treatment to improve the wettability. Thereafter, the semiconductor part (13) is held with a part-holding nozzle (12) having a heating means and the adhesive layer (13c) is brought into contact with the resin layer whose surface has been modified. The adhesive layer (13c) is heated with the heating means and thermally cured. Thus, the adhesion between the adhesive layer (13c) and the resin surface (5a) is improved, and the part-holding nozzle (12) can be separated from the semiconductor part (13) before the complete curing of the adhesive layer (13c). The time necessary for part bonding can be shortened to realize improved productivity in the step of thermal press-bonding.
(FR)
La présente invention concerne des procédés d'adhérence et d'empilage de pièce qui peuvent permettre une amélioration de productivité dans l'étape d'une adhérence par pression thermique. Une pièce semi-conductrice (13) à couche adhésive thermodurcissable (13c) formée du côté inférieur est collée à un substrat (5) ayant une couche de résine sur une de ses surfaces, de la manière suivante : La surface de résine (5a) du substrat (5) est modifiée à l'avance par un traitement au plasma pour améliorer son humectabilité. Ensuite, la pièce semi-conductrice (13) est retenue par une buse de maintien (12) comportant un moyen de chauffage et la couche adhésive (13c) est mise en contact avec la couche de résine dont la surface a été modifiée. La couche adhésive (13c) est chauffée avec le moyen de chauffage et thermiquement durcie. Ainsi, l'adhésion entre la couche adhésive (13c) et la surface de résine (5a) est améliorée, et la buse retenant la pièce (12) peut être séparée de la pièce semi-conductrice (13) avant le durcissement complet de la couche adhésive (13c). Le temps nécessaire à l'adhérence de la pièce peut être diminué pour réaliser une productivité améliorée à l'étape d'adhérence par pression thermique.
(JA)
 本発明の課題は、熱圧着工程の生産性向上を実現することができる部品接合方法および部品積層方法を提供することである。  下面に熱硬化性の接着層(13c)が設けられた半導体部品(13)を、表面に樹脂層を有する基板(5)に接合する部品接合において、予め基板(5)の樹脂表面(5a)をプラズマ処理によって表面改質を行って濡れ性を向上させた後、加熱手段を有する部品保持ノズル(12)によって半導体部品(13)を保持し、表面改質された樹脂層に接着層(13c)を当接させ、接着層(13c)を加熱手段によって加熱して熱硬化させる。これにより接着層(13c)と樹脂表面(5a)の密着性を向上させて、部品保持ノズル(12)を接着層(13c)の完全硬化を待たずに半導体部品(13)から離隔させることができ、部品接合に要する時間を短縮して熱圧着工程の生産性向上を実現することができる。
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