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1. WO2007099612 - 一芯双方向光モジュール

公開番号 WO/2007/099612
公開日 07.09.2007
国際出願番号 PCT/JP2006/303787
国際出願日 28.02.2006
IPC
H01S 5/022 2006.01
H電気
01基本的電気素子
S光を増幅または生成するために,放射の誘導放出による光増幅を用いた装置;光領域以外の電磁放射の誘導放出を用いた装置
5半導体レーザ
02レーザ作用にとって本質的ではない構造的な細部または構成
022マウント;ハウジング
H01L 31/02 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
02細部
CPC
G02B 6/4246
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
24Coupling light guides
42Coupling light guides with opto-electronic elements
4201Packages, e.g. shape, construction, internal or external details
4246Bidirectionally operating package structures
H01L 2224/45144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45144Gold (Au) as principal constituent
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48137
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
48137the bodies being arranged next to each other, e.g. on a common substrate
H01L 2924/3011
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
30Technical effects
301Electrical effects
3011Impedance
H01L 31/0203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0203Containers; Encapsulations ; , e.g. encapsulation of photodiodes
出願人
  • 株式会社フジクラ Fujikura Ltd. [JP/JP]; 〒1358512 東京都江東区木場1丁目5番1号 Tokyo 5-1, Kiba 1-chome, Kohtoh-ku Tokyo 135-8512, JP (AllExceptUS)
  • 小里 貞二郎 ORI, Teijiro [JP/JP]; JP (UsOnly)
  • 増子 幸一郎 MASUKO, Koichiro [JP/JP]; JP (UsOnly)
発明者
  • 小里 貞二郎 ORI, Teijiro; JP
  • 増子 幸一郎 MASUKO, Koichiro; JP
代理人
  • 志賀 正武 SHIGA, Masatake; 〒1048453 東京都中央区八重洲2丁目3番1号 Tokyo 2-3-1, Yaesu Chuo-ku, Tokyo 1048453, JP
優先権情報
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SINGLE-CORE BILATERAL OPTICAL MODULE
(FR) MODULE OPTIQUE BILATERAL MONOCONDUCTEUR
(JA) 一芯双方向光モジュール
要約
(EN)
An optical transceiver comprises a bilateral optical subassembly, a printed circuit board of optical transmissions/receptions for a bilateral optical subassembly, and an outer case covering the bilateral optical subassembly and the printed circuit board. The bilateral optical subassembly includes a laser diode, a photodiode, a stem for mounting the laser diode and the photodiode, a cap coacting with the stem for sealing the laser diode and the photodiode, and a crosstalk reducing structure for reducing the optical and/or electric crosstalk. The crosstalk reducing structure can contain a layer formed in the inner face of the cap, for example, to absorb an infrared ray.
(FR)
La présente invention concerne un émetteur-récepteur optique comprenant un sous-ensemble optique bilatéral, une carte de circuit imprimé d'émission/réception optique pour un sous-ensemble optique bilatéral et un boîtier externe protégeant ce sous-ensemble et la carte de circuit imprimé. Le sous-ensemble optique bilatéral comprend une diode laser, une photodiode, une tige de montage de la diode laser et de la photodiode, un bouchon en interaction avec la tige pour sceller la diode laser et la photodiode, et une structure de réduction de diaphonie qui réduit la diaphonie optique et/ou électrique. La structure de réduction de diaphonie peut contenir une couche formée dans la face interne du bouchon, par exemple, pour absorber un rayon infrarouge.
(JA)
 光トランシーバであって、双方向光サブアセンブリと、双方向光サブアセンブリのための光送受信用のプリント回路基板と、双方向光サブアセンブリおよびプリント回路基板を覆うアウターケースと、を含む。双方向光サブアセンブリは、レーザダイオードと、フォトダイオードと、レーザダイオードおよびフォトダイオードを搭載するためのステムと、レーザダイオードおよびフォトダイオードを、ステムと協働して密封するためのキャップと、光学および/または電気クロストーク低減のためのクロストーク低減構造と、を含む。クロストーク低減構造は、例えば、キャップの内面に形成され、赤外線を吸収し得る層を含むことができる。
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