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1. WO2005081062 - パターン形成材料用基材、ポジ型レジスト組成物およびレジストパターン形成方法

パーマリンク
公開番号 WO/2005/081062
公開日 01.09.2005
国際出願番号 PCT/JP2005/001798
国際出願日 08.02.2005
IPC
G03F 7/004 2006.1
G物理学
03写真;映画;光波以外の波を使用する類似技術;電子写真;ホログラフイ
Fフォトメカニカル法による凹凸化又はパターン化された表面の製造,例.印刷用,半導体装置の製造法用;そのための材料;そのための原稿;そのために特に適合した装置
7フォトメカニカル法,例.フォトリソグラフ法,による凹凸化又はパターン化された表面,例.印刷表面,の製造;そのための材料,例.フォトレジストからなるもの;そのため特に適合した装置
004感光材料
G03F 7/039 2006.1
G物理学
03写真;映画;光波以外の波を使用する類似技術;電子写真;ホログラフイ
Fフォトメカニカル法による凹凸化又はパターン化された表面の製造,例.印刷用,半導体装置の製造法用;そのための材料;そのための原稿;そのために特に適合した装置
7フォトメカニカル法,例.フォトリソグラフ法,による凹凸化又はパターン化された表面,例.印刷表面,の製造;そのための材料,例.フォトレジストからなるもの;そのため特に適合した装置
004感光材料
039光分解可能な高分子化合物,例.ポジ型電子レジスト
CPC
G03F 7/0007
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
0007Filters, e.g. additive colour filters; Components for display devices
G03F 7/004
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/0045
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0045with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
G03F 7/0047
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0047characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
G03F 7/039
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/0392
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
出願人
  • 東京応化工業株式会社 TOKYO OHKA KOGYO CO., LTD. [JP]/[JP] (AllExceptUS)
  • 平山 拓 HIRAYAMA, Taku [JP]/[JP] (UsOnly)
  • 塩野 大寿 SHIONO, Daiju [JP]/[JP] (UsOnly)
  • 松宮 祐 MATSUMIYA, Tasuku [JP]/[JP] (UsOnly)
  • 木下 洋平 KINOSHITA, Yohei [JP]/[JP] (UsOnly)
発明者
  • 平山 拓 HIRAYAMA, Taku
  • 塩野 大寿 SHIONO, Daiju
  • 松宮 祐 MATSUMIYA, Tasuku
  • 木下 洋平 KINOSHITA, Yohei
代理人
  • 棚井 澄雄 TANAI, Sumio
優先権情報
2004-04504320.02.2004JP
2004-04504420.02.2004JP
2004-18230021.06.2004JP
2004-18230121.06.2004JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) BASE MATERIAL FOR PATTERN FORMING MATERIAL, POSITIVE RESIST COMPOSITION AND METHOD OF RESIST PATTERN FORMATION
(FR) MATERIAU DE BASE POUR MATERIAU DE FORMATION DE MODELE; COMPOSITION DE RESERVE POSITIVE ET PROCEDE DE FORMATION DE MODELE DE RESERVE
(JA) パターン形成材料用基材、ポジ型レジスト組成物およびレジストパターン形成方法
要約
(EN) A base material of pattern forming material, with which a pattern of high resolution with LER reduced can be formed; a relevant positive resist composition; and a relevant method of resist pattern formation. This base material comprises low-molecular compound (X1) having two or more phenolic hydroxyls wherein some or all of phenolic hydroxyls of polyhydric phenol compound (x) satisfying the following requirements (1), (2) and (3) are protected by acid-dissociative dissolution inhibiting groups, (1) molecular weight ranging from 300 to 2500, (2) molecular weight dispersity being 1.5 or below, and (3) amorphous film being formable according to the spin coating technique. Alternatively, this base material comprises protected substance (Y1) having two or more phenolic hydroxyls wherein a given proportion of phenolic hydroxyls of polyhydric phenol compound (y) of 300 to 2500 molecular weight are protected by acid-dissociative dissolution inhibiting groups.
(FR) Un matériau de base de matériau de formation de modèle avec un modèle de résolution élevée avec LER réduit peut être formé, une composition de réserve positive pertinente et un procédé pertinent de formation de modèle de réserve. Ce matériau de base comprend un composé de poids moléculaire faible (X1) ayant deux ou plusieurs hydroxyles phénoliques dans lesquels certains ou tous les hydroxyles phénoliques du composé de phénol polyhydrique (x) répondant aux exigences suivantes (1), (2) et (3) sont protégés par des groupes inhibiteurs de dissolution dissociative d'acide, (1) poids moléculaire compris entre 300 et 2500, (2) dispersion de poids moléculaire étant égale ou inférieure à 1.5 et (3) couche mince amorphe pouvant être formée selon la technique du dépôt par centrifugation. En alternative, ce matériau de base comprend une substance protégée (Y1) ayant deux ou plusieurs hydroxyles phénoliques dans lesquels une proportion donnée d'hydroxyles phénoliques du composé de phénol (y) de poids moléculaire compris entre 300 et 2500 sont protégés par des groupes inhibiteurs de dissolution dissociative d'acide.
(JA) 　ＬＥＲの低減された高解像性のパターンが形成できるパターン形成材料の基材、ポジ型レジスト組成物およびレジストパターン形成方法が提供される。上記基材は、 ２以上のフェノール性水酸基を有し、下記（１）、（２）および（３）を満たす多価フェノール化合物（ｘ）における前記フェノール性水酸基の一部または全部が酸解離性溶解抑制基で保護されている低分子化合物（Ｘ１）を含有する：（１）分子量が３００～２５００（２）分子量の分散度が１．５以下（３）スピンコート法によりアモルファスな膜を形成しうる；又は上記基材は、２以上のフェノール性水酸基を有し、分子量が３００～２５００である多価フェノール化合物（ｙ）における前記フェノール性水酸基の所定割合のものが酸解離性溶解抑制基で保護されている保護体（Ｙ１）を含有する。
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