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1. WO2005036630 - エッチングストッパー層形成用組成物

公開番号 WO/2005/036630
公開日 21.04.2005
国際出願番号 PCT/JP2004/013125
国際出願日 09.09.2004
IPC
H01L 21/311 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
31半導体本体上への絶縁層の形成,例.マスキング用またはフォトリソグラフィック技術の使用によるもの;これらの層の後処理;これらの層のための材料の選択
3105後処理
311絶縁層のエッチング
H01L 21/312 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
31半導体本体上への絶縁層の形成,例.マスキング用またはフォトリソグラフィック技術の使用によるもの;これらの層の後処理;これらの層のための材料の選択
312有機物層,例.フォトレジスト
CPC
C08G 77/52
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
48in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
50by carbon linkages
52containing aromatic rings
C09D 183/14
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
183Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
14in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
H01L 21/02126
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02126the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H01L 21/31116
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31105Etching inorganic layers
31111by chemical means
31116by dry-etching
H01L 21/3121
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
312Organic layers, e.g. photoresist
3121Layers comprising organo-silicon compounds
H01L 21/7681
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76802by forming openings in dielectrics
76807for dual damascene structures
7681involving one or more buried masks
出願人
  • AZ ELECTRONIC MATERIAL (JAPAN) K.K. [JP]/[JP] (AE, AG, AL, AM, AU, AZ, BA, BB, BF, BJ, BR, BW, BY, BZ, CA, CF, CG, CI, CM, CN, CO, CR, CU, DM, DZ, EC, EG, GA, GD, GE, GH, GM, GN, GQ, GW, HR, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LV, MA, MD, MG, MK, ML, MN, MR, MW, MX, MZ, NA, NE, NI, NO, NZ, OM, PG, PH, RU, SC, SD, SG, SL, SN, SY, SZ, TD, TG, TJ, TM, TN, TT, TZ, UA, UG, UZ, VC, VN, YU, ZA, ZM, ZW)
  • AZ ELECTRONIC MATERIALS USA CORP. [US]/[US] (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
  • 田代 裕治 TASHIRO, Yuji [JP]/[JP] (UsOnly)
  • 青木 宏幸 AOKI, Hiroyuki [JP]/[JP] (UsOnly)
  • 石川 智規 ISHIKAWA, Tomonori [JP]/[JP] (UsOnly)
発明者
  • 田代 裕治 TASHIRO, Yuji
  • 青木 宏幸 AOKI, Hiroyuki
  • 石川 智規 ISHIKAWA, Tomonori
代理人
  • 吉武 賢次 YOSHITAKE, Kenji
優先権情報
2003-35221910.10.2003JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) COMPOSITION FOR FORMING ETCHING STOPPER LAYER
(FR) COMPOSITION PERMETTANT DE FORMER UNE COUCHE D'ARRET DE GRAVURE
(JA) エッチングストッパー層形成用組成物
要約
(EN)
Disclosed is a composition for forming an etching stopper layer which has dry etching selectivity ratio and low dielectric constant at the same time. Also disclosed is a method for manufacturing a semiconductor device wherein such a composition is used. Specifically, a composition for forming an etching stopper layer including a silicon-containing polymer is characterized in that the silicon-containing polymer included in the composition has a disilylbenzene structure. Also disclosed is a method for manufacturing a semiconductor device wherein an etching stopper layer is formed using such a composition.
(FR)
Cette invention concerne une composition constituant une couche d'arrêt de gravure présentant simultanément un rapport de sélectivité de gravure à sec et une faible constante diélectrique. L'invention concerne également un procédé de fabrication d'un dispositif à semi-conducteur utilisant une telle composition. Plus spécifiquement, l'invention concerne une composition pour couche d'arrêt de gravure comprenant un polymère à base de silicium caractérisé par sa structure disilybenzène. L'invention porte également sur un procédé de fabrication d'un semi-conducteur dans lequel une couche d'arrêt de gravure est formée au moyen d'une telle composition.
(JA)
 ドライエッチング選択比と低誘電率とを両立したエッチングストッパー層を形成するための組成物、およびそれを用いた半導体装置の製造法の提供を目的とする。この目的は、ケイ素含有ポリマーを含んでなるエッチングストッパー層形成用組成物であって、組成物に含有されるケイ素含有ポリマーがジシリルベンゼン構造を含んでいるエッチングストッパー層形成用組成物、およびそれを用いてエッチングストッパー層を形成させる半導体装置の製造法により解決される。
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