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1. WO2005013369 - 固体撮像装置、固体撮像装置の製造方法及びこれを用いたカメラ

公開番号 WO/2005/013369
公開日 10.02.2005
国際出願番号 PCT/JP2004/011400
国際出願日 02.08.2004
予備審査請求日 11.03.2005
IPC
H04N 5/225 2006.01
H電気
04電気通信技術
N画像通信,例.テレビジョン
5テレビジョン方式の細部
222スタジオ回路;スタジオ装置;スタジオ機器
225テレビジョンカメラ
CPC
H01L 27/14621
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14621Colour filter arrangements
H01L 27/14627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
14627Microlenses
H01L 27/14685
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
14685Process for coatings or optical elements
H01L 31/02162
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02162for filtering or shielding light, e.g. multicolour filters for photodetectors
H01L 31/02164
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02162for filtering or shielding light, e.g. multicolour filters for photodetectors
02164for shielding light, e.g. light blocking layers, cold shields for infra-red detectors
H01L 31/02327
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0232Optical elements or arrangements associated with the device
02327the optical elements being integrated or being directly associated to the device, e.g. back reflectors
出願人
  • 松下電器産業株式会社 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP]/[JP] (AllExceptUS)
  • 稲葉 雄一 INABA, Yuuichi (UsOnly)
  • 笠野 真弘 KASANO, Masahiro (UsOnly)
  • 吉田 真治 YOSHIDA, Shinji (UsOnly)
  • 山口 琢己 YAMAGUCHI, Takumi (UsOnly)
  • 春日 繁孝 KASUGA, Shigetaka (UsOnly)
  • 村田 隆彦 MURATA, Takahiko (UsOnly)
  • 折田 賢児 ORITA, Kenji (UsOnly)
発明者
  • 稲葉 雄一 INABA, Yuuichi
  • 笠野 真弘 KASANO, Masahiro
  • 吉田 真治 YOSHIDA, Shinji
  • 山口 琢己 YAMAGUCHI, Takumi
  • 春日 繁孝 KASUGA, Shigetaka
  • 村田 隆彦 MURATA, Takahiko
  • 折田 賢児 ORITA, Kenji
代理人
  • 中島 司朗 NAKAJIMA, Shiro
優先権情報
2003-28525401.08.2003JP
2004-00841915.01.2004JP (優先権主張取下げ 11.03.2005)
2004-18919128.06.2004JP (優先権主張取下げ 11.03.2005)
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD FOR SOLID-STATE IMAGING DEVICE AND CAMERA USING THIS
(FR) DISPOSITIF D'IMAGERIE A SEMI-CONDUCTEURS, SON PROCEDE DE PRODUCTION, ET CAMERA L'UTILISANT
(JA) 固体撮像装置、固体撮像装置の製造方法及びこれを用いたカメラ
要約
(EN)
A solid-state imaging device comprising a plurality of light reception means arranged two-dimensionally in a semiconductor substrate, a filtering means that transmits only lights having wavelengths to be incident to the light reception means, and a light shielding means that shields an incident light and has openings at positions respectively facing the plurality of light reception means, wherein he filtering means is disposed between the plurality of light reception means and the light shielding means, whereby color mixing caused by an oblique light is prevented.
(FR)
L'invention porte sur un dispositif d'imagerie à semi-conducteurs comportant plusieurs moyens de réception de lumière disposés bidimensionnellement sur un substrat semi-conducteur, un moyen de filtrage ne transmettant que la lumière incidente des longueurs d'onde frappant les moyens de réception de lumière et un écran arrêtant la lumière et présentant des ouvertures face aux moyens de réception de lumière, le moyen de filtrage étant disposé entre les moyens de réception de lumière et l'écran pour empêcher les mélanges de couleurs occasionnés par les rayons obliques.
(JA)
半導体基板内に2次元状に配列された複数の受光手段と、前記受光手段に入射すべき波長の光のみを通過させる濾光手段と、入射光を遮断する遮光手段であって、前記複数の受光手段のそれぞれに対向する位置に開口を有する遮光手段とを備える固体撮像装置において、前記濾光手段は前記複数の受光手段と前記遮光手段との間に配設する。これによって、斜め光に起因する混色を防止する。
他の公開
US2007058055
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