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1. WO2004086504 - ホトダイオードアレイ及びその製造方法、並びに放射線検出器

パーマリンク
公開番号 WO/2004/086504
公開日 07.10.2004
国際出願番号 PCT/JP2004/004211
国際出願日 25.03.2004
IPC
H01L 27/146 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
144輻射線によって制御される装置
146固体撮像装置構造
CPC
H01L 27/1446
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
1446in a repetitive configuration
H01L 27/14601
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
H01L 27/14643
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
H01L 27/14683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
H01L 31/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
H01L 31/035281
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
035272characterised by at least one potential jump barrier or surface barrier
035281Shape of the body
出願人
  • 浜松ホトニクス株式会社 HAMAMATSU PHOTONICS K.K. [JP]/[JP] (AllExceptUS)
  • 柴山 勝己 SHIBAYAMA, Katsumi [JP]/[JP] (UsOnly)
発明者
  • 柴山 勝己 SHIBAYAMA, Katsumi
代理人
  • 長谷川 芳樹 HASEGAWA, Yoshiki
優先権情報
2003-08778227.03.2003JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) PHOTODIODE ARRAY AND PRODUCTION METHOD THEREOF, AND RADIATION DETECTOR
(FR) RESEAU DE PHOTODIODES, SON PROCEDE DE PRODUCTION, ET DETECTEUR DE RADIATIONS
(JA) ホトダイオードアレイ及びその製造方法、並びに放射線検出器
front page image
要約
(EN) A photodiode array (1) is provided with an n-type silicon substrate (3). A plurality of photodiodes (4) are formed in an array form on the surface opposite to the surface, onto which a light (L) to be detected enters, of the n-type silicon substrate (3). Recesses (6), each having a specified depth recessed below an area that does not correspond to a photodiode (4)-formed area, are formed in an area corresponding to the photodiode (4)-formed area on the light (L)-incident surface of the substrate (3).
(FR) L'invention porte sur un réseau de photodiodes (1) à substrat (3) de silicium de type n comportant des photodiodes (4) disposées en réseau sur la surface du substrat (3) opposée à la surface d'incidence de la lumière à détecter. Des évidements (6) présentant chacun une profondeur spécifique sont formés dans une zone correspondant à celle des photodiodes (4), mais du côté de la surface d'incidence de la lumière à détecter du substrat.
(JA) ホトダイオードアレイ１は、ｎ型シリコン基板３を備える。ｎ型シリコン基板３における被検出光Ｌの入射面の反対面側に、複数のホトダイオード４がアレイ状に形成されている。ｎ型シリコン基板３の被検出光Ｌの入射面側におけるホトダイオード４が形成された領域に対応する領域に、ホトダイオード４が形成された領域に対応しない領域よりも窪んだ所定の深さを有する窪み部６が形成されている。
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