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1. WO2004044073 - 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置

公開番号 WO/2004/044073
公開日 27.05.2004
国際出願番号 PCT/JP2003/014438
国際出願日 13.11.2003
IPC
H01L 21/316 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
31半導体本体上への絶縁層の形成,例.マスキング用またはフォトリソグラフィック技術の使用によるもの;これらの層の後処理;これらの層のための材料の選択
314無機物層
316酸化物またはガラス性酸化物または酸化物を基礎としたガラスからなるもの
CPC
C08G 77/04
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
C08G 77/08
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
06Preparatory processes
08characterised by the catalysts used
C08G 77/16
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
14containing silicon bound to oxygen-containing groups
16to hydroxyl groups
C08K 5/235
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUse of inorganic or non-macromolecular organic substances as compounding ingredients
5Use of organic ingredients
16Nitrogen-containing compounds
22Compounds containing nitrogen bound to another nitrogen atom
23Azo-compounds
235Diazo and polyazo compounds
C09D 183/04
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
183Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
04Polysiloxanes
H01L 21/02126
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02126the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
出願人
  • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP]/[JP] (AllExceptUS)
  • IWABUCHI, Motoaki [JP]/[JP] (UsOnly)
  • YAGIHASHI, Fujio [JP]/[JP] (UsOnly)
  • HAMADA, Yoshitaka [JP]/[JP] (UsOnly)
  • NAKAGAWA, Hideo [JP]/[JP] (UsOnly)
  • SASAGO, Masaru [JP]/[JP] (UsOnly)
発明者
  • IWABUCHI, Motoaki
  • YAGIHASHI, Fujio
  • HAMADA, Yoshitaka
  • NAKAGAWA, Hideo
  • SASAGO, Masaru
代理人
  • OKUYAMA, Shoichi
優先権情報
2002-32912613.11.2002JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE
(FR) COMPOSITION POUR FORMER UN FILM POREUX, FILM POREUX, PROCEDE DE PRODUCTION DE CELUI-CI, FILM ISOLANT INTERCOUCHE ET DISPOSITIF A SEMI-CONDUCTEURS
(JA) 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
要約
(EN)
A composition for film formation from which a porous film of practical mechanical strength can be prepared through simple processing at low cost; a porous film and a process for producing the same; and a highly reliable semiconductor device of low cost and high performance wherein the porous film is incorporated. In particular, a composition for porous film formation, comprising a polymer obtained by hydrolytic condensation of at least one silane compound of the general formula: (R1)a Si (R2)4-a (1), preferably a polymer obtained by co-hydrolytic condensation of at least one silane compound of the general formula (1) and at least one silane compound of the general formula: (R3)b Si (R4)4-b (2). Further, there is provided a process for producing the porous film, comprising the steps of coating with the above film formation composition and forming pores.
(FR)
L'invention concerne une composition pour former un film poreux, cette composition permettant de produire par un procédé simple et économique un film poreux présentant une résistance mécanique efficace. L'invention concerne également un film poreux et un procédé de production de celui-ci, ainsi qu'un dispositif à semi-conducteurs à haute fiabilité, de faible coût et à hautes performances comprenant ce film poreux. La composition susmentionnée comprend notamment un polymère obtenu par condensation hydrolytique d'au moins un silane de formule générale (R1)a Si (R2)4-a (1), de préférence un polymère obtenu par condensation co-hydrolytique d'au moins un silane de formule générale (1) et d'au moins un silane de formule générale (R3)b Si (R4)4-b (2). L'invention concerne en outre un procédé de production dudit film poreux, consistant à appliquer la composition susmentionnée sous forme de couche et à former des pores dans cette couche.
(JA)
簡単な工程かつ低コストで、実用的な力学的強度を有する多孔質膜を形成できる膜形成用組成物、多孔質膜とその製造方法、及び多孔質膜を内蔵する低コスト、高性能、かつ、信頼性の高い半導体装置を提供する。具体的には、下記一般式(1)で表されるシラン化合物の一以上を加水分解縮合して得られる重合体、好ましくは、一般式(1)に表されるシラン化合物の一以上と、下記一般式(2)に表されるシラン化合物の一以上とを共加水分解縮合して得られる重合体を含む多孔質膜形成用組成物を用いる。また、この膜形成用組成物の塗布工程と多孔質形成工程とを含む多孔質膜の製造方法を用いる。   (R1)a Si(R2)4-a   (1)     (R3)bSi(R4)4-b   (2)
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