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1. WO2004025718 - エッチング液及びエッチング方法

公開番号 WO/2004/025718
公開日 25.03.2004
国際出願番号 PCT/JP2003/009848
国際出願日 04.08.2003
IPC
H01L 21/308 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
302表面の物理的性質または形状を変換するため,例.エッチング,ポリシング,切断
306化学的または電気的処理,例.電解エッチング
308マスクを用いるもの
CPC
C09K 13/04
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
H01L 21/308
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
308using masks
H01L 21/31111
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31105Etching inorganic layers
31111by chemical means
出願人
  • DAIKIN INDUSTRIES, LTD. [JP]/[JP] (AllExceptUS)
  • ITANO, Mitsushi [JP]/[JP] (UsOnly)
  • KANEMURA, Takashi [JP]/[JP] (UsOnly)
  • MOMOTA, Hiroshi [JP]/[JP] (UsOnly)
  • WATANABE, Daisuke [JP]/[JP] (UsOnly)
発明者
  • ITANO, Mitsushi
  • KANEMURA, Takashi
  • MOMOTA, Hiroshi
  • WATANABE, Daisuke
代理人
  • SAEGUSA, Eiji
優先権情報
2002-26929113.09.2002JP
2002-34682329.11.2002JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) ETCHANT AND ETCHING METHOD
(FR) AGENT D'ATTAQUE ET PROCÉDÉ D'ATTAQUE
(JA) エッチング液及びエッチング方法
要約
(EN) An etchant preferable to etch an object on which a film (a high-k film) having a relative dielectric constant of not less than 8 and a silicon oxide film are formed, wherein the etching rate of the high-k film is not less than 2 Å/min., and the ratio of the etching rate of a thermal oxide film (THOX) to that of the high-k film is not more than 50. A mixture of a hydrogen fluoride (HF) and various ether organic solvents is preferably used as the etchant.
(FR) L'invention concerne un agent d'attaque utilisé de préférence pour attaquer un objet sur lequel sont formés un film (film à constante K élevée) présentant une constante diélectrique relative supérieure ou égale à 8 et un film d'oxyde de silicium. La vitesse d'attaque du film à constante K élevée est supérieure ou égale à 2 Å/min., et le rapport entre la vitesse d'attaque du film d'oxyde thermique (THOX) et celle du film à constante K élevée est inférieur ou égal à 50. L'agent d'attaque est constitué de préférence d'un mélange de fluorure d'hydrogène (HF) et d'autres solvants organiques
(JA) not available
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