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1. WO2004019399 - ガス供給系及び処理システム

公開番号 WO/2004/019399
公開日 04.03.2004
国際出願番号 PCT/JP2003/010705
国際出願日 25.08.2003
予備審査請求日 30.01.2004
IPC
C23C 16/448 2006.1
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
16ガス状化合物の分解による化学的被覆であって,表面材料の反応生成物を被覆層中に残さないもの,すなわち化学蒸着(CVD)法
44被覆の方法に特徴のあるもの
448反応性ガス流を発生させるために用いる方法に特徴があるもの,例.先行する材料の蒸発または昇華によるもの
H01L 21/00 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
CPC
C23C 16/448
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/4481
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
4481by evaporation using carrier gas in contact with the source material
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
H01L 21/67017
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
Y10T 137/0324
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
137Fluid handling
0318Processes
0324With control of flow by a condition or characteristic of a fluid
出願人
  • TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • KASAI, Shigeru [JP]/[JP] (UsOnly)
  • TANAKA, Sumi [JP]/[JP] (UsOnly)
  • SAITO, Tetsuya [JP]/[JP] (UsOnly)
  • YAMAMOTO, Norihiko [JP]/[JP] (UsOnly)
  • YANAGITANI, Kenichi [JP]/[JP] (UsOnly)
発明者
  • KASAI, Shigeru
  • TANAKA, Sumi
  • SAITO, Tetsuya
  • YAMAMOTO, Norihiko
  • YANAGITANI, Kenichi
代理人
  • YOSHITAKE, Kenji
優先権情報
2002-24429923.08.2002JP
2003-19121603.07.2003JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) GAS SUPPLY SYSTEM AND TREATMENT SYSTEM
(FR) SYSTÈME D'ALIMENTATION EN GAZ ET SYSTÈME DE TRAITEMENT
(JA) ガス供給系及び処理システム
要約
(EN) A treatment system capable of supplying a raw material gas produced in a material storage vessel into a treatment apparatus substantially without causing a pressure loss. A treatment system has a treatment apparatus (22) with gas jetting means (42) for jetting a predetermined raw material gas, with low vapor pressure and formed of a metallic compound material (M), in a treatment container (26) to apply a predetermined treatment to an object (W) to be treated, and a gas supply system (24) for supplying the predetermined raw material gas to the gas jetting means. The gas jetting means is a shower head portion, and the gas supply system has a gas passage (56) extending upward from the shower head portion, a material storage vessel (58) installed on the upper end portion of the gas passage and receiving the metallic compound material in its inside, and an open/close valve (60) for opening and closing the gas passage.
(FR) L'invention concerne un système de traitement pouvant acheminer un matériau de départ gazeux, produit dans une cuve de stockage de matériaux, à un appareil de traitement, sans pratiquement aucune perte de pression. Ledit système de traitement présente un appareil de traitement (22) pourvu d'un moyen (42) servant à produire un jet de matériau de départ gazeux prédéterminé, présentant une faible pression de vapeur et formé d'un composé métallique (M), dans un contenant de traitement (26) pour appliquer un traitement prédéterminé à un objet (W) à traiter, ainsi qu'un système d'alimentation en gaz (24) servant à acheminer le matériau de départ gazeux audit moyen de production de jet de gaz. Ce dernier est pourvu d'une partie se présentant sous la forme d'une pomme de douche, et le système d'acheminement de gaz présente un passage de gaz (56) s'étendant vers le haut à partir de la partie en forme de pomme de douche, une cuve de stockage de matériau (58) installée sur la partie d'extrémité supérieure du passage de gaz et recevant le composé métallique, ainsi qu'une soupape de d'ouverture/fermeture (60) pour l'ouverture et la fermeture du passage de gaz.
(JA) 材料貯留槽内で発生させた原料ガスを、ほとんど圧力損失を生ぜしめることなく処理装置内へ供給することが可能な処理システムを提供する。被処理体Wに対して所定の処理を施すために処理容器26内に蒸気圧の低い金属化合物材料Mよりなる所定の原料ガスを噴射するガス噴射手段42を設けた処理装置22と、前記ガス噴射手段に前記所定の原料ガスを供給するガス供給系24とを有する処理システムにおいて、前記ガス噴射手段はシャワーヘッド部であり、前記ガス供給系は、前記シャワーヘッド部より上方に延びるガス通路56と、前記ガス通路の上端部に取り付けられて内部に前記金属化合物材料を収容する材料貯留槽58と、前記ガス通路を開閉する開閉弁60と、を備える。
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