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1. US20140138707 - Power semiconductor module

官庁 アメリカ合衆国
出願番号 14131581
出願日 05.07.2012
公開番号 20140138707
公開日 22.05.2014
特許番号 09299628
特許付与日 29.03.2016
公報種別 B2
IPC
H01L 23/28
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
28封緘,例.封緘層,被覆
H01L 25/18
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
18装置がグループH01L27/00~H01L51/00の同じメイングループの2つ以上の異なるサブグループに分類される型からなるもの
H01L 25/07
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
03すべての装置がグループH01L27/00~H01L51/00の同じサブグループに分類される型からなるもの,例.整流ダイオードの組立体
04個別の容器を持たない装置
07装置がグループH01L29/00に分類された型からなるもの
H01L 23/31
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
28封緘,例.封緘層,被覆
31配列に特徴のあるもの
H01L 23/373
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
34冷却,加熱,換気または温度補償用装置
36冷却または加熱を容易にするための材料の選択または成形,例.ヒート・シンク
373装置用材料の選択により容易になる冷却
H01L 23/36
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
34冷却,加熱,換気または温度補償用装置
36冷却または加熱を容易にするための材料の選択または成形,例.ヒート・シンク
CPC
H01L 23/3121
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
3107the device being completely enclosed
3121a substrate forming part of the encapsulation
H01L 23/3135
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
3107the device being completely enclosed
3135Double encapsulation or coating and encapsulation
H01L 23/36
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
H01L 23/3735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
H01L 25/072
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/00
072the devices being arranged next to each other
H01L 25/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
出願人 Takayoshi Miki
Mitsubishi Electric Corporation
Yasushi Nakayama
Takeshi Oi
Kazuhiro Tada
Shiori Idaka
Shigeru Hasegawa
Tomohiro Kobayashi
Yukio Nakashima
発明者 Takayoshi Miki
Yasushi Nakayama
Takeshi Oi
Kazuhiro Tada
Shiori Idaka
Shigeru Hasegawa
Tomohiro Kobayashi
Yukio Nakashima
代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
優先権情報 2011-153020 11.07.2011 JP
発明の名称
(EN) Power semiconductor module
要約
(EN)

A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region.

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