1. US20130263774 - Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material 12 for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph.