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1. US20130130513 - INTERLAYER INSULATING LAYER FORMING METHOD AND SEMICONDUCTOR DEVICE

官庁
アメリカ合衆国
出願番号 13811012
出願日 20.07.2011
公開番号 20130130513
公開日 23.05.2013
公報種別 A1
IPC
H01L 21/02
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
CPC
H01L 21/02274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
02274in the presence of a plasma [PECVD]
出願人 Miyatani Kotaro
TOKYO ELECTRON LIMITED
Nemoto Takenao
Kurotori Takuya
Kobayashi Yasuo
Nozawa Toshihisa
発明者 Miyatani Kotaro
Nemoto Takenao
Kurotori Takuya
Kobayashi Yasuo
Nozawa Toshihisa
優先権情報 2010-164212 21.07.2010 JP
発明の名称
(EN) INTERLAYER INSULATING LAYER FORMING METHOD AND SEMICONDUCTOR DEVICE
要約
(EN)

The interlayer insulating layer forming method for forming an interlayer insulating layer of a semiconductor device via a plasma CVD method includes: carrying a substrate into a depressurized processing container; supplying a plasma generating gas to a first space spaced apart from the substrate; exciting the plasma generating gas in the first space; and supplying a raw material gas including a boron compound that includes at least a hydrogen group or hydrocarbon group, to a second space between the first space and the substrate. Also, a semiconductor device is interconnected in a multilayer through an interlayer insulating layer having an amorphous structure including boron, carbon, and nitrogen, wherein, in the interlayer insulating layer, a hydrocarbon group or an alkyl amino group is mixed in the amorphous structure comprising hexagonal boron nitride and cubic boron nitride.