処理中

しばらくお待ちください...

設定

設定

出願の表示

1. US20120258286 - Method for producing a template for epitaxial growth having a sapphire (0001) substrate, an initial-stage A1N layer and laterally overgrown A1XGAYN (0001) layer

官庁 アメリカ合衆国
出願番号 13517970
出願日 25.12.2009
公開番号 20120258286
公開日 11.10.2012
特許番号 09412586
特許付与日 09.08.2016
公報種別 B2
IPC
C30B 25/18
C化学;冶金
30結晶成長
B単結晶成長;共晶物質の一方向固化または共析晶物質の一方向析出;物質のゾーンメルティングによる精製;特定構造を有する均質多結晶物質の製造;単結晶または特定構造を有する均質多結晶物質;単結晶または特定構造を有する均質多結晶物質の後処理;そのための装置
25反応ガスの化学反応による単結晶成長,例.化学蒸着(CVD)による成長
02エピタキシャル層成長
18基板によって特徴づけられたもの
H01L 21/02
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
C30B 29/40
C化学;冶金
30結晶成長
B単結晶成長;共晶物質の一方向固化または共析晶物質の一方向析出;物質のゾーンメルティングによる精製;特定構造を有する均質多結晶物質の製造;単結晶または特定構造を有する均質多結晶物質;単結晶または特定構造を有する均質多結晶物質の後処理;そのための装置
29材料または形状によって特徴づけられた単結晶または特定構造を有する均質多結晶物質
10無機化合物または組成物
40AIIIBV化合物
H01L 33/00
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
33光の放出に特に適用される少なくとも1つの電位障壁または表面障壁を有する半導体装置;それらの装置またはその部品の製造,あるいは処理に特に適用される方法または装置;それらの装置の細部
CPC
C30B 25/183
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
18characterised by the substrate
183being provided with a buffer layer, e.g. a lattice matching layer
C30B 25/186
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
18characterised by the substrate
186being specially pre-treated by, e.g. chemical or physical means
C30B 29/403
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
C30B 29/406
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
406Gallium nitride
H01L 21/0242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
0242Crystalline insulating materials
H01L 21/0243
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
02428Structure
0243Surface structure
出願人 Hiroshi Amano
SOKO KAGAKU CO., LTD.
Satoshi Kamiyama
Myunghee Kim
Cyril Pernot
Akira Hirano
発明者 Hiroshi Amano
Satoshi Kamiyama
Myunghee Kim
Cyril Pernot
Akira Hirano
代理人 Haynes Beffel & Wolfeld LLP
発明の名称
(EN) Method for producing a template for epitaxial growth having a sapphire (0001) substrate, an initial-stage A1N layer and laterally overgrown A1XGAYN (0001) layer
要約
(EN)

A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.