US20120168875 Semiconductor device

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	Claims
1. A semiconductor device comprising: a plurality of cell arrays, in which a plurality of gates extending in a first direction are arranged and disposed in a second direction orthogonal to the first direction, being arranged and disposed in the first direction, wherein each of the plurality of cell arrays includes a first conductive type well region and a second conductive type well region that are formed below the gates and respectively extend in the second direction, wherein a first cell array that is one of the plurality of cell arrays includes a first well potential supply region into which impurities of the same conductive type as that of the first conductive type well region are implanted in the first conductive type well region, first and second adjacent gates that are respectively disposed in both sides of the first well potential supply region in the second direction, a third adjacent gate that is disposed adjacent to the first adjacent gate in the opposite side to the first well potential supply region, and a fourth adjacent gate that is disposed adjacent to the second adjacent gate in the opposite side to the first well potential supply region, wherein the first, the second, the third, and the fourth adjacent gates are disposed at the same pitch in the second direction, wherein a first adjacent cell array adjacent to the first cell array in the first direction among the plurality of cell arrays includes four gates each of which is opposed to at least one of the first, the second, the third, and the fourth adjacent gates in the first direction, wherein a second well potential supply region into which impurities of the same conductive type as that of the first conductive type well region are implanted is formed between the first adjacent gate and the third adjacent gate, and wherein the first, the second, and the third adjacent gates are dummy gates.
2. The semiconductor device of claim 1, wherein at least any one of the first and the second adjacent gates is connected directly to the gates that are opposed to the adjacent gates in the first adjacent cell array.
3. The semiconductor device of claim 1, wherein the first and the second adjacent gates are dummy gates.
4. The semiconductor device of claim 1, wherein the first and the second well potential supply regions are formed as one body.
5. A semiconductor device comprising: a plurality of cell arrays, in which a plurality of gates extending in a first direction are arranged and disposed in a second direction orthogonal to the first direction, being arranged and disposed in the first direction, wherein each of the plurality of cell arrays includes a first conductive type well region and a second conductive type well region that are formed below the gates and respectively extend in the second direction, wherein a first cell array that is one of the plurality of cell arrays includes a first well potential supply region into which impurities of the same conductive type as that of the first conductive type well region are implanted in the first conductive type well region, first and second adjacent gates that are respectively disposed in both sides of the first well potential supply region in the second direction, a third adjacent gate that is disposed adjacent to the first adjacent gate in the opposite side to the first well potential supply region, and a fourth adjacent gate that is disposed adjacent to the second adjacent gate in the opposite side to the first well potential supply region, wherein the first, the second, the third, and the fourth adjacent gates are disposed at the same pitch in the second direction, wherein a first adjacent cell array adjacent to the first cell array in the first direction among the plurality of cell arrays includes four gates each of which is opposed to at least one of the first, the second, the third, and the fourth adjacent gates in the first direction, and wherein the first, the second, and the third adjacent gates are dummy gates.
6. The semiconductor device of claim 1, wherein the first conductive type well region in the first cell array and the first conductive type well region in the first adjacent cell array are adjacent to each other in the first direction, and wherein the first adjacent cell array includes a third well potential supply region into which impurities of the same conductive type as that of the first conductive type well region are implanted in the first conductive type well region.
7. The semiconductor device of claim 6, the first well potential supply region in the first cell array and the third well potential supply region in the first adjacent cell array are formed as one body.
8. The semiconductor device of claim 1, wherein the first to the fourth adjacent gates extend over the boundary of the first conductive type well region and the second conductive type well region.
9. The semiconductor device of claim 1, wherein the first to the fourth adjacent gates are divided in the boundary of the first conductive type well region and the second conductive type well region.