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1. US20120037502 - Sintered Body for ZnO-Ga2O3-Based Sputtering Target and Method of Producing the Same

官庁 アメリカ合衆国
出願番号 13265572
出願日 27.04.2010
公開番号 20120037502
公開日 16.02.2012
公報種別 A1
IPC
C23C 14/08
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
06被覆材料に特徴のあるもの
08酸化物
C04B 35/453
C化学;冶金
04セメント;コンクリート;人造石;セラミックス;耐火物
B石灰;マグネシア;スラグ;セメント;その組成物,例.モルタル,コンクリートまたは類似の建築材料;人造石;セラミックス;耐火物;天然石の処理
35組成に特徴を持つ成形セラミック製品;セラミック組成;セラミック製品を製造するための無機化合物粉末の処理
01酸化物を基とするもの
453酸化亜鉛,酸化スズまたは酸化ビスマスまたはそれらと他の酸化物,例.亜鉛酸塩,スズ酸塩またはビスマス酸塩,の固溶体を基とするもの
CPC
C23C 14/3414
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3407Cathode assembly for sputtering apparatus, e.g. Target
3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
C04B 35/453
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
35Shaped ceramic products characterised by their composition
01based on oxide ceramics
453based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
C04B 35/64
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
35Shaped ceramic products characterised by their composition
622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
64Burning or sintering processes
C04B 2235/3284
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3284Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
C04B 2235/3286
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3286Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
C04B 2235/5436
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
54Particle size related information
5418expressed by the size of the particles or aggregates thereof
5436micrometer sized, i.e. from 1 to 100 micron
出願人 Nagayama Satsuki
Satonosono Kaoru
発明者 Nagayama Satsuki
Satonosono Kaoru
優先権情報 2009-111757 01.05.2009 JP
発明の名称
(EN) Sintered Body for ZnO-Ga2O3-Based Sputtering Target and Method of Producing the Same
要約
(EN)

[Object] To provide a sintered body for a ZnO—Ga2O3-based sputtering target, which has a low resistivity and is capable of suppressing the formation of nodules and flakes, and a method of producing the same.

[Solving Means] The present invention includes the steps of forming a powder mixture of a zinc oxide powder and a gallium oxide powder, housing the compact of the powder mixture in an inside of a container 20 to be installed in an inside of a sintering furnace 10, raising a temperature of the compact up to a sintering temperature of not less than 1200° C. but not more than 1500° C. while introducing oxygen into the inside of the container 20, keeping the sintering temperature under a state in which the oxygen is introduced into the inside of the container 20, and lowering a temperature of the inside of the furnance under a state in which the introduction of the oxygen into the inside of the container 20 is stopped. The container 20 has a function to be heated within the furnace to achieve a homogenization of a heat distribution of the compact, and hence it is possible to eliminate an influence due to the heat distribution within the furnace and to improve a property of evenly heating the compact. Thus, it is possible to obtain the GZO sputtering target having the low resistivity and capable of suppressing the formation of nodules.