処理中

しばらくお待ちください...

設定

設定

出願の表示

1. US20100247416 - SILICON MANUFACTURING APPARATUS AND RELATED METHOD

注意: このテキストは、OCR 処理によってテキスト化されたものです。法的な用途には PDF 版をご利用ください。

[ EN ]

Claims

1. A silicon manufacturing apparatus comprising:
a reactor tube standing upright with a central axis extending in a vertical direction for reacting zinc and silicon compound;
a zinc supply pipe having a heating portion for heating zinc to produce zinc gas and a zinc ejecting portion ejecting and supplying zinc gas to the reactor tube;
a zinc feeding section for feeding zinc into the zinc supply pipe;
a silicon compound supply pipe ejecting and supplying silicon compound gas into the reactor tube so as to allow silicon compound gas to flow through the reactor tube from a lower side to an upper side therein; and
a heating furnace disposed outside the reactor tube to define a heating region in which a part of the reactor tube, the heating portion and the zinc ejecting portion are placed to allow the reactor tube, through which zinc gas and silicon compound gas flow, to have a temperature distribution under which a temperature closer to the central axis is lower than that closer to a side circumference wall of the reactor tube.
2. The silicon manufacturing apparatus according to claim 1, wherein:
the heating furnace stands upright in the vertical direction; the reactor tube has an upper portion formed with an exhaust port for exhausting reaction product gas between zinc and silicon compound; the reactor tube has a central portion, to which the zinc ejecting portion of the zinc supply pipe is disposed, and a lower portion to which the silicon compound supply pipe is connected; the zinc supply pipe stands upright in the vertical direction and has an upper portion to which the zinc feeding portion is connected; and the heating region involves the central portion of the reactor tube.
3. The silicon manufacturing apparatus according to claim 1, wherein:
the zinc ejecting portion includes a plurality of ejecting portions placed on the zinc supply pipe in the vertical direction or a radial direction.
4. The silicon manufacturing apparatus according to claim 1, wherein:
at least one of the zinc ejecting portion and the silicon compound ejecting portion is formed in plural areas spaced in the vertical direction in a multiple-stage structure.
5. The silicon manufacturing apparatus according to claim 1, further comprising:
A silicon powder accumulating mechanism, disposed in an area below the reactor tube, which includes an upper gate valve, a lower gate valve, an accumulating compartment defined between the upper gate valve and the lower gate to allow silicon powder, produced in the reactor tube, to free-fall for accumulation, and a gate valve controller controllably opening or closing the upper gate valve and the lower gate valve.
6. The silicon manufacturing apparatus according to claim 1, further comprising:
a silicon powder takeout member, disposed in an area below the reactor tube, which includes an accumulating section for melting and accumulating silicon powder produced in the reactor tube, an exhaust port for permitting melted silicon, accumulated in the accumulating section, to be exhausted to the outside of the reactor tube, and a holding section for temporarily holding silicon exhausted from the exhaust port, and a heating section for heating the silicon powder takeout member.
7. The silicon manufacturing apparatus according to claim 1, wherein:
the zinc feeding section includes a zinc feeding member composed of a liquid pool portion having a concaved shape in cross section surrounded with a circumferential wall for pooling melted zinc, an upright portion standing upright from a bottom portion of the liquid pool portion and having a height lower than that of the circumferential wall, and a through-bore extending from an upper side of the upright portion to a lower side thereof so as to penetrate therethrough, the zinc feeding section being detachably mounted on an upper portion of the zinc supply pipe.
8. The silicon manufacturing apparatus according to claim 7, wherein:
the zinc feeding member is made of single crystalline silicon or a multicrystalline silicon.
9. The silicon manufacturing apparatus according to claim 1, wherein:
the zinc feeding member includes a zinc feeding pipe connected to an upper portion of the zinc supply pipe via a joint portion in an area outside the heating region; and a zinc supply device through which solid zinc free-falls into the zinc supply pipe.
10. The silicon manufacturing apparatus according to claim 1, wherein:
the zinc supply pipe includes an extending portion extending downward beyond the zinc ejecting portion and placed in the heating region.
11. The silicon manufacturing apparatus according to claim 10, wherein:
the extending portion includes a heat absorbing member for absorbing heat generated by the heating section.
12. The silicon manufacturing apparatus according to claim 11, wherein:
the heat absorbing member is made of single crystalline silicon or a multicrystalline silicon.
13. The silicon manufacturing apparatus according to claim 1, wherein:
the zinc supply pipe is placed in an area outside the reactor tube and extends through a space between the reactor tube and the heating furnace; and the zinc ejecting portion is a connecting portion communicating with an inside of the reactor tube.
14. The silicon manufacturing apparatus according to claim 1, wherein:
the zinc supply pipe penetrates into an inside of the reactor tube and vertically extends through the reactor tube, and the zinc ejecting portion includes an opening opened to the inside of the reactor tube.
15. The silicon manufacturing apparatus according to claim 1, wherein:
the temperature distribution allows a temperature to progressively decrease from a side circumferential surface of the reactor tube to the central axis.
16. The silicon manufacturing apparatus according to claim 1, wherein:
the silicon compound is silicon tetrachloride and ejected to the reactor tube at a temperature higher than a boiling point thereof and a temperature lower than 100° C.
17. The silicon manufacturing apparatus according to claim 1, further comprising:
a straitening member located in the reactor tube; wherein the zinc ejecting portion includes a first zinc ejecting portion; the silicon compound ejecting portion ejects and supplies the silicon compound into the reactor tube in a first ejecting direction; the first zinc ejecting portion ejects and supplies zinc to the reactor tube in a second ejecting direction; the straitening member allows zinc gas, ejected from the first ejecting portion in the second ejecting direction, to be deflected while permitting silicon compound gas, ejected from the silicon compound ejecting portion in the first ejecting direction, to flow from a lower side to an upper side in the reactor tube.
18. The silicon manufacturing apparatus according to claim 17, wherein:
the straitening member includes a annular cylindrical member vertically standing upright or a truncated circular hollow cone member vertically standing upright with a diameter decreasing from the lower side to the upper side in the reactor tube.
19. The silicon manufacturing apparatus according to claim 17, wherein:
the silicon compound ejecting portion is disposed in face-to-face relation to a region surrounded with a circumferential wall of the straitening member.
20. The silicon manufacturing apparatus according to claim 17, wherein:
the silicon compound ejecting portion is disposed in a region surrounded with a circumferential wall of the straitening member.
21. The silicon manufacturing apparatus according to claim 17, wherein:
the first zinc ejecting portion is disposed in association with a circumferential wall of the straitening member.
22. The silicon manufacturing apparatus according to claim 21, wherein:
the first zinc ejecting portion is disposed in face-to-face relation to a circumferential wall of the straitening member at a lower side portion thereof.
23. The silicon manufacturing apparatus according to claim 17, wherein:
the zinc ejecting portion further includes a second zinc ejecting portion that is disposed inside the reactor tube at an area lower than the first zinc ejecting portion to be disposed in below the silicon compound ejecting portion.
24. The silicon manufacturing apparatus according to claim 17, wherein:
the straitening member includes a first straitening member disposed in the upper side in the reactor tube and a second straitening member disposed in the lower side in the reactor tube; the zinc ejecting portion further includes a second zinc ejecting portion disposed in the reactor tube at an area lower than the first zinc ejecting portion; the first zinc ejecting portion is disposed in association with a circumferential wall of the first straitening member; and the second zinc ejecting portion is disposed in association with a circumferential wall of the second straitening member.
25. The silicon manufacturing apparatus according to claim 17, wherein:
the silicon compound ejecting portion includes a first silicon compound ejecting portion placed in the upper side in the reactor tube and a second silicon compound ejecting portion placed in the lower side in the reactor tube; the first silicon compound ejecting portion is disposed in a region surrounded with a circumferential wall of the first straitening member; and the second silicon compound ejecting portion is disposed in a region surrounded with a circumferential wall of the second straitening member.
26. A method of manufacturing silicon, the method comprising the steps of:
heating a reactor tube, vertically standing upright, with a heating furnace disposed around the reactor tube;
ejecting and supplying zinc gas into the reactor tube;
supplying silicon compound gas into the reactor tube by ejecting silicon compound gas upward along a central axis of the reactor tube from an area lower than a position in which zinc gas is ejected; and
producing silicon powder upon reducing silicon compound gas with zinc gas under a temperature distribution maintained in the reactor tube such that a temperature closer to the central axis of the reactor tube is lower than that closer to a side circumferential wall of the reactor tube.