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1. US20100247416 - SILICON MANUFACTURING APPARATUS AND RELATED METHOD

官庁 アメリカ合衆国
出願番号 12739022
出願日 20.10.2008
公開番号 20100247416
公開日 30.09.2010
公報種別 A1
IPC
C01B 33/023
C化学;冶金
01無機化学
B非金属元素;その化合物
33けい素;その化合物
02けい素
021製造
023シリカまたはシリカ含有材料の還元によるもの
F28D 21/00
F機械工学;照明;加熱;武器;爆破
28熱交換一般
D熱交換媒体が直接接触しない熱交換装置で,他のサブクラスに分類されないもの;蓄熱プラントまたは装置一般
21グループF28D1/00~F28D20/00のいずれにも包含されない熱交換装置
出願人 Kinotech Solar Energy Corporation
発明者 Takeuchi Yoshinori
Sakaki Daisuke
Ohashi Tadashi
Matsumura Hisashi
代理人 DUANE MORRIS LLP - Philadelphia;IP DEPARTMENT
発明の名称
(EN) SILICON MANUFACTURING APPARATUS AND RELATED METHOD
要約
(EN)

A silicon manufacturing apparatus is disclosed as having a reactor tube (10) in which reaction occurs between zinc and silicon compound, zinc supply pipes (30, 30′) having heating portions to heat zinc for generating zinc gas and zinc ejecting portions ejecting and supplying zinc gas to the reactor tube, a zinc feeding section (40A, 40B) feeding zinc into the zinc supply pipes, a silicon compound supply pipe (50, 50A, 50B, 50C, 50c, 54, 57, 90) having a silicon compound ejecting portion to eject and supply silicon compound gas to the reactor tube so as to allow silicon compound gas to flow from a lower side to an upper side in the reactor tube, and a heating furnace (20) disposed outside the reactor tube to define a heating region (a) accommodating therein a part of the reactor tube, the heating portion and the zinc ejecting section for heating the same so as to allow the reactor tube, through which zinc gas and silicon compound gas flow, to have the temperature distribution such that a temperature closer to a central axis (C) of the reactor tube is lower than that closer to a side circumferential wall of the reactor tube.