US20180175062 Semiconductor device

A semiconductor device (1) is manufactured which includes a SiC epitaxial layer (28), a plurality of transistor cells (18) that are formed in the SiC epitaxial layer (28) and that are subjected to ON/OFF control by a predetermined control voltage, a gate electrode (19) that faces a channel region (32) of the transistor cells (18) in which a channel is formed when the semiconductor device (1) is in an ON state, a gate metal (44) that is exposed at the topmost surface for electrical connection with the outside and that is electrically connected to the gate electrode (19) while being physically separated from the gate electrode (19), and a built-in resistor (21) that is made of polysilicon and that is disposed below the gate metal (44) so as to electrically connect the gate metal (44) and the gate electron (19) together.

他の公開

CN106415837

CN110634825

CN201480065081.1

EP3076431

EP3644363

JP2019197920

JPWO2015080162

US20160379992

US20190386025

WO/2015/080162

H	電気
01	基本的電気素子
L	半導体装置,他に属さない電気的固体装置
23	半導体または他の固体装置の細部
52	動作中の装置内の1つの構成部品から他の構成部品へ電流を導く装置
522	半導体本体上に分離できないように形成された導電層及び絶縁層の多層構造からなる外部の相互接続を含むもの

H	電気
01	基本的電気素子
L	半導体装置,他に属さない電気的固体装置
27	1つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
02	整流,発振,増幅またはスイッチングに特に適用される半導体構成部品を含むものであり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁を有する集積化された受動回路素子を含むもの
04	基板が半導体本体であるもの
10	複数の個々の構成部品を反復した形で含むもの
118	マスタースライス集積回路

H	電気
01	基本的電気素子
L	半導体装置,他に属さない電気的固体装置
29	整流,増幅,発振またはスイッチングに特に適用される半導体装置であり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁,例.PN接合空乏層またはキャリア集中層,を有するコンデンサーまたは抵抗器;半導体本体または電極の細部
02	半導体本体
12	構成材料に特徴のあるもの
16	ドーピング材料または他の不純物は別にして,非結合型周期表の第IV族の元素のみを含むもの

H	電気
01	基本的電気素子
L	半導体装置,他に属さない電気的固体装置
29	整流,増幅,発振またはスイッチングに特に適用される半導体装置であり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁,例.PN接合空乏層またはキャリア集中層,を有するコンデンサーまたは抵抗器;半導体本体または電極の細部
66	半導体装置の型
68	整流,増幅またはスイッチされる電流を流さない電極に電流のみまたは電位のみを与えることにより制御できるもの
70	バイポーラ装置
72	トランジスタ型装置,すなわち,供給される制御信号に連続的に応答できるもの
739	電界効果により制御されるもの

H	電気
01	基本的電気素子
L	半導体装置,他に属さない電気的固体装置
29	整流,増幅,発振またはスイッチングに特に適用される半導体装置であり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁,例.PN接合空乏層またはキャリア集中層,を有するコンデンサーまたは抵抗器;半導体本体または電極の細部
40	電極
41	その形状,相対的大きさまたは配置に特徴のあるもの
423	整流,増幅またはスイッチされる電流を流さないもの

処理中

国内段階移行

公報目録 (オーソリティファイル)

設定

ご意見・ご感想

出願の表示

1. US20180175062 - Semiconductor device

WIPO Translate

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23	Details of semiconductor or other solid state devices
52	Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522	including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
528	Geometry or; layout of the interconnection structure

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27	Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02	including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04	the substrate being a semiconductor body
10	including a plurality of individual components in a repetitive configuration
118	Masterslice integrated circuits
11898	Input and output buffer/driver structures

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27	Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02	including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04	the substrate being a semiconductor body
10	including a plurality of individual components in a repetitive configuration
118	Masterslice integrated circuits
11803	using field effect technology
11807	CMOS gate arrays

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27	Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02	including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04	the substrate being a semiconductor body
10	including a plurality of individual components in a repetitive configuration
118	Masterslice integrated circuits
11896	using combined field effect/bipolar technology

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02	Semiconductor bodies ; ; Multistep manufacturing processes therefor
12	characterised by the materials of which they are formed
16	including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
1608	Silicon carbide

処理中