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1. (US20180108395) Semiconductor storage device and method for writing of the same
注意: このテキストは、OCR 処理によってテキスト化されたものです。法的な用途には PDF 版をご利用ください。

Claims

1. A semiconductor storage device comprising:
a memory cell that includes a control electrode, a floating electrode, a source and a drain;
a switch that is configured to connect the control electrode and the drain;
a source driver that is connected to the source and is configured to apply a predetermined voltage to the source;
a current source that is configured to be connected to the source and to supply a predetermined current to the source;
a drain driver that is connected to the drain and is configured to apply a predetermined voltage to the drain;
a voltage measurement circuit that is configured to measure a voltage generated between the control electrode and the source; and
a control electrode driver that is configured to apply a predetermined voltage to the control electrode, wherein
in a writing to the memory cell, the voltage measurement circuit measures a voltage generated between the control electrode and the source when the switch is in an on state and a predetermined current flows from the current source to the memory cell, and
the control electrode driver applies to the control electrode a voltage that is controlled based on the voltage measured by the voltage measurement circuit.
2. A method for writing of a semiconductor storage device, the semiconductor storage device including:
a memory cell that has a control electrode, a floating electrode, a source and a drain;
a switch that connects between the control electrode and the drain;
a source driver that is connected to the source and applies a predetermined voltage to the source;
a current source that is configured to be connected to the source and to supply a predetermined current to the source;
a drain driver that is connected to the drain and applies a predetermined voltage to the drain;
a voltage measurement circuit that measures a voltage generated between the control electrode and the source; and
a control electrode driver that applies a predetermined voltage to the control electrode,
the method for writing of the semiconductor storage device, comprising, in a writing to the memory cell:
turning on the switch and causing the predetermined current to flow from the current source to the memory cell;
measuring a voltage generated between the control electrode and the source by the voltage measurement circuit when the predetermined current flows between the source and the drain; and
applying a voltage that is controlled based on the voltage measured to the control electrode from the control electrode driver.
3. A method for writing of a semiconductor storage device, the semiconductor storage device including:
a memory cell that has a control electrode, a floating electrode, a source and a drain;
a switch that connects the control electrode and the drain;
a source driver that is connected to the source and applies a predetermined voltage to the source;
a current source that is configured to be connected to the source and to supply a predetermined current to the source;
a drain driver that is connected to the drain and applies a predetermined voltage to the drain;
a voltage measurement circuit that measures a voltage generated between the control electrode and the source; and
a control electrode driver that applies a predetermined voltage to the control electrode,
the method for writing of the semiconductor storage device, comprising, in a writing to the memory cell:
turning on the switch and causing the predetermined current to flow from the current source to the memory cell;
measuring a first voltage generated between the control electrode and the source by the voltage measurement circuit when the predetermined current flows between the source and the drain;
executing a first writing by applying a voltage that is controlled based on the first voltage to the control electrode from the control electrode driver;
turning on the switch and causing the predetermined current to flow from the current source to the memory cell;
measuring a second voltage generated between the control electrode and the source by the voltage measurement circuit when the predetermined current flows between the source and the drain; and
executing a second writing by applying a voltage that is controlled based on the second voltage to the control electrode from the control electrode driver.
4. A method for writing of a semiconductor storage device, the semiconductor storage device including:
a memory cell that has a control electrode, a floating electrode, a source and a drain;
a switch that connects the control electrode and the drain;
a source driver that is connected to the source and applies a predetermined voltage to the source;
a current source that is configured to be connected to the source and to supply a predetermined current to the source;
a drain driver that is connected to the drain and applies a predetermined voltage to the drain;
a voltage measurement circuit that measures a voltage generated between the control electrode and the source; and
a control electrode driver that applies a predetermined voltage to the control electrode,
the method for writing of the semiconductor storage device, comprising, in a writing to the memory cell:
turning on the switch and causing the predetermined current to flow from the current source to the memory cell;
measuring a voltage generated between the control electrode and the source by the voltage measurement circuit when the predetermined current flows between the source and the drain; and
executing a writing by applying a voltage that is controlled based on the voltage measured to the control electrode from the control electrode driver, wherein
the turning on the switch, the causing the predetermined current to flow, the measuring the voltage, and the executing the writing are repeated until the voltage reaches a predetermined value.
5. A semiconductor storage device comprising:
a reference memory cell that at least includes a first control electrode, a first floating electrode, a first source and a first drain;
a storage memory cell that at least includes a second control electrode, a second floating electrode, a second source, and a second drain;
a first source driver that is connected to the first source and is configured to apply a predetermined voltage to the first source;
a current source that is configured to be connected to the first source and the second source and to supply a predetermined current to the first source or the second source;
a first drain driver that is connected to the first drain and is configured to apply a predetermined voltage to the first drain;
a switch that is configured to connect the first control electrode and the first drain;
a voltage measurement circuit that is configured to measure a voltage generated between the first control electrode and the first source;
a first control electrode driver that is configured to apply a predetermined voltage to the first control electrode;
a second source driver that is connected to the second source and is configured to apply a predetermined voltage to the second source;
a second drain driver that is connected to the second drain and is configured to apply a predetermined voltage to the second drain; and
a second control electrode driver that is configured to apply a predetermined voltage to the second control electrode, wherein
the voltage measurement circuit measures a voltage generated between the first control electrode and the first source when the switch is in an on state and the predetermined current flows from the current source to the memory cell, and
the second source driver, the second drain driver, the second control electrode driver generate voltages that are controlled based on the voltage that is generated between the first control electrode and the first source electrode and is measured by the voltage measurement circuit.
6. The semiconductor storage device according to claim 5, wherein
the reference memory cell is one of a plurality of the reference memory cells having different thresholds,
the plurality of memory cells are written to have the different thresholds from a threshold before writing to the storage memory cell to a threshold after completion of the writing to the storage memory cell,
in the writing to the storage memory cell, the voltage applied from the second control electrode is switched by sequentially measuring the voltages between the first control electrode and the first source of the reference memory cells from one having the threshold before the writing.
7. The semiconductor storage device according to claim 5, wherein
the storage memory cell includes a second switch that is configured to connect the second control electrode and the second drain, and a second voltage measurement circuit that is configured to measure a voltage generated between the second control electrode and the second source,
the semiconductor storage device further comprising:
a threshold reference memory cell that includes a third control electrode, a third floating electrode, a third source, a third drain, a third switch configured to connect the third control electrode and the third drain, and a third voltage measurement circuit configured to measure a voltage generated between the third control electrode and the third source;
a comparator that is connected to the second voltage measurement circuit and the third voltage measurement circuit, wherein
the second voltage measurement circuit measures a first voltage generated between the second control electrode and the second source when the second switch is in an on state and the predetermined current flows between the second control electrode and the second source,
the third voltage measurement circuit measures a second voltage generated between the third control electrode and the third source when the third switch is in an on state and the predetermined current flows between the third control electrode and the third source, and
the comparator compares the first voltage and the second voltage, thereby to verify that a predetermined writing to the storage memory cell has been executed.
8. A method for writing of a semiconductor storage device, the semiconductor storage device including:
a reference memory cell that at least includes a first control electrode, a first floating electrode, a first source and a first drain;
a storage memory cell that at least includes a second control electrode, a second floating electrode, a second source, and a second drain;
a first source driver that is connected to the first source and applies a predetermined voltage to the first source;
a current source that is connected to the first source and supplies a predetermined current to the first source;
a first drain driver that is connected to the first drain and applies a predetermined voltage to the first drain;
a switch that is configured to connect the first control electrode and the first drain;
a voltage measurement circuit that measures a voltage generated between the first control electrode and the first source;
a first control electrode driver that applies a predetermined voltage to the first control electrode;
a second source driver that is connected to the second source and applies a predetermined voltage to the second source;
a second drain driver that is connected to the second drain and applies a predetermined voltage to the second drain; and
a second control electrode driver that applies a predetermined voltage to the second control electrode,
the method for writing of the semiconductor storage device, comprising:
measuring a voltage generated between the first control electrode and the first source when the switch is in an on state and the predetermined current flow from the current source to the reference memory cell; and
controlling voltages to be generated from the second source driver, the second drain driver and the second control electrode driver based on the voltage that is generated between the first control electrode and the first source and is measured by the voltage measurement circuit.
9. The method for writing of the semiconductor storage device, according to claim 8, wherein
the reference memory cell is one of a plurality of reference memory cells having different thresholds, and the plurality of reference memory cells are written to have the different thresholds from a threshold before writing to the storage memory cell to a threshold after completion of the writing to the storage memory cell, and
in the writing to the storage memory cell, the second control electrode is applied with a voltage that is sequentially switched based on the voltages generated between the first control electrode and the first source of the reference memory cells from one having the threshold before the writing.
10. The method for writing of the semiconductor storage device, according to claim 8, wherein
the storage memory cell includes a second switch that connects the second control electrode and the second drain, and a second voltage measurement circuit that measures a voltage generated between the second control electrode and the second source, and
the semiconductor storage device further includes:
a threshold reference memory cell that includes a third control electrode, a third floating electrode, a third source, a third drain, a third switch connecting the third control electrode and the third drain, and a third voltage measurement circuit measuring a voltage generated between the third control electrode and the third source; and
a comparator that is connected to the third voltage measurement circuit and the second voltage measurement circuit,
the method for writing of the semiconductor storage device, further comprising:
measuring a first voltage generated between the second control electrode and the second source by the second voltage measurement circuit when the second switch is in an on state and the predetermined current flows between the second control electrode and the second source;
measuring a second voltage generated between the third control electrode and the third source by the third voltage measurement circuit when the third switch is in an on state and the predetermined current flows between the third control electrode and the third source; and
executing a threshold verification to confirm that the writing of the storage memory cell has been executed by comparing the first voltage and the second voltage by the comparator.