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1. (US20170092355) SEMICONDUCTOR STORAGE DEVICE

官庁 : アメリカ合衆国
出願番号: 15122905 出願日: 19.03.2014
公開番号: 20170092355 公開日: 30.03.2017
公報種別: A1
(国内移行後) 元 PCT 国際出願 出願番号:PCTJP2014057438 ; 公開番号: クリックしてデータを表示
IPC:
G11C 13/00
G 物理学
11
情報記憶
C
静的記憶
13
11/00,23/00,または25/00に包含されない記憶素子の使用によって特徴づけられたデジタル記憶装置
CPC:
G11C 13/0069
G11C 13/0004
G11C 13/003
G11C 221/72
G11C 221/79
出願人: HITACHI, LTD.
発明者: Kenzo KUROTSUCHI
Yoshitaka SASAGO
Satoru HANZAWA
優先権情報:
発明の名称: (EN) SEMICONDUCTOR STORAGE DEVICE
要約: front page image
(EN)

It is possible to realize a highly reliable semiconductor storage device using the semiconductor storage device which includes a plurality of memory chains including a plurality of memory cells connected in series and in which the memory cell is a storage element that performs rewrite using a cell transistor and current, the memory chain has a structure in which the storage elements are connected in parallel, a power-supply voltage and a ground voltage are supplied from an outside, and a voltage to be used for the rewrite of the storage element is lower than the ground voltage, and further, it is possible to realize the semiconductor storage device that has a large capacity, is capable of high-speed read and write, and can be manufactured with low cost.


Also published as:
WO/2015/140946