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1. (US20140355337) Method of pinning domain walls in a nanowire magnetic memory device

Translation自動翻訳: 原文 > 日本語
出願番号: 14350434 出願日: 08.10.2012
公開番号: 20140355337 公開日: 04.12.2014
特許番号: 09293184 特許付与日: 22.03.2016
公報種別: B2
PCT 関連事項:出願番号:PCTGB2012052493 ; 公開番号: クリックしてデータを表示
IPC:
G11C 19/00
G11C 19/02
G11C 7/00
G11C 11/00
G11C 5/02
G11C 19/38
G11C 11/16
G11C 11/14
H04L 12/26
G11C 19/08
G11C 14/00
CPC:
G11C 11/1675
G11C 11/14
G11C 11/161
G11C 14/0081
G11C 19/02
G11C 19/0808
G11C 19/0833
G11C 19/085
G11C 19/0875
H01L 43/02
H01L 43/10
H04L 43/02
H04L 43/10
出願人: University of York
発明者: Kevin O'Grady
Gonzalo Vallejo Fernandez
Atsufumi Hirohata
代理人: DASCENZO Intellectual Property Law, P.C.
優先権情報: 1117446.3 10.10.2011 GB
発明の名称: (EN) Method of pinning domain walls in a nanowire magnetic memory device
要約:
(EN)

There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600 Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements.